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NE3512S02-T1C-A Datasheet(PDF) 2 Page - California Eastern Labs

Part # NE3512S02-T1C-A
Description  HETERO JUNCTION FIELD EFFECT TRANSISTOR
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Manufacturer  CEL [California Eastern Labs]
Direct Link  http://www.cel.com
Logo CEL - California Eastern Labs

NE3512S02-T1C-A Datasheet(HTML) 2 Page - California Eastern Labs

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NE3512S02
RECOMMENDED OPERATING CONDITIONS (TA = +25
°C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
1
2
3
V
Drain Current
ID
5
10
15
mA
Input Power
Pin
−
−
0
dBm
ELECTRICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leak Current
IGSO
VGS =
−3 V
−
0.5
10
µA
Saturated Drain Current
IDSS
VDS = 2 V, VGS = 0 V
15
40
70
mA
Gate to Source Cutoff Voltage
VGS (off)
VDS = 2 V, ID = 100
µA
−0.2
−0.7
−2.0
V
Transconductance
gm
VDS = 2 V, ID = 10 mA
40
55
−
mS
Noise Figure
NF
VDS = 2 V, ID = 10 mA, f = 12 GHz
−
0.35
0.5
dB
Associated Gain
Ga
12.5
13.5
−
dB
Data Sheet PG10592EJ01V0DS
2


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