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ADVANCED PRODUCT INFORMATION - Rev 0.1

12/2002

AWS5524

Die Applications

Bonding and circuit connections for the unpackaged

AWS5524 die are shown in Figure 8, and application

details are listed in the following notes:

1. Cb are DC blocking capacitors external to the

device. A value of 100 pF is sufficient for operation

to 500 MHz. The values may be tailored to provide

specific electrical responses. The isolation of the

switch provides enough decoupling of RF ports 1

through 4 so that overall switch performance is not

affected.

2. The VS pin provides a fixed voltage potential to

the common port of the switch. To get the best linear

performance, it should be tied to the logic high

voltage potential (not the power supply). Current

draw on this pin is less than 5

µA.

3. The RF Ground bondwires should be kept as

short as possible and bonded directly to a good RF

ground for best broadband performance.

protection on a specific RF port, typically the port

attached to the antenna. The ESD rating of the device

is ±125 V HBM overall. This rating is associated

with the control pin to RF port path. RF port to RF

port/RF Gnd has been determined to be >±500 V

choke on a port, an ESD protection to ±8 kV contact

discharge can be achieved.

5. The die may be attached by either conductive or

non-conductive epoxy formulated for attaching

semiconductor parts. The back of the die is

electrically isolated from the switch circuit and can

be grounded or left isolated.

Figure 8: Application Schematic

Control Pin, RF Path 2

RF Gnd, Path 1 Shunt

RF Port 4

Common

Port Supply

Note 2 (Logic high)

Control Pin, RF Path 1

RFC

RF3G

RF4

VS

V1

RF2G

RF2

RF3

V3

V4

RF4G

V2

RF1

RF1G

Control Pin, RF Path 4

Control Pin, RF Path 3

RF Gnd, Path 2 Shunt

Keep RF Gnd Bondwires Short

4 Places, Note 3

RF Port 1

RF Port 2

RF Port 3

RF Gnd, Path 3 Shunt

RF Gnd, Path 4 Shunt

Common (Ant.) RF Port

Note 4

APPLICATION INFORMATION