03/2006

AWT6307R

Linear PowerAmplifier Module

PRELIMINARY DATA SHEET - Rev 1.0

M9 Package

8 Pin 3 mm x 3 mm x 1 mm

Surface Mount Module

FEATURES

•

InGaP HBT Technology

•

High Efficiency:

21 % @ +16 dBm output

40 % @ +28 dBm output

•

Low Quiescent Current: 16 mA

•

Low Leakage Current in Shutdown Mode: <1

µA

•

Internal Voltage Regulation

•

Optimized for a 50

Ω System

•

Low Profile Surface Mount Package: 1 mm

•

CDMA 1XRTT, 1xEV-DO Compliant

•

Pinout Enables Easy Phone Board Migration

From 4 mm x 4 mm Package

•

APPLICATIONS

•

CDMA Wireless Handsets and Data Devices

PRODUCT DESCRIPTION

The AWT6307R meets the increasing demands for

higher efficiency and smaller footprint in CDMA 1X

handsets. The package pinout was chosen to

enable handset manufacturers to switch from a

4 mm x 4 mm PA module with few layout changes

while reducing board area requirements by 44 %.

The AWT6307R uses ANADIGICS’ exclusive InGaP-

Plus™ technology, which combines HBT and

pHEMT devices on the same die, to enable state-

of-the-art reliability, temperature stability, and

ruggedness. The AWT6307R is part of ANADIGICS’

High-Efficiency-at-Low-Power (HELP™) family of

CDMA power amplifiers, which deliver low quiescent

currents and significantly greater efficiency without

a costly external DAC or DC-DC converter. Through

selectable bias modes, the AWT6307 achieves

optimal efficiency across different output power

levels, specifically at low- and mid-range power

levels where the PA typically operates, thereby

dramatically increasing handset talk-time and

standby-time. Its built-in voltage regulator eliminates

the

need

for

external

voltage

regulation

components. The 3 mm x 3 mm x 1 mm surface

mount package incorporates matching networks

optimized for output power, efficiency and linearity

in a 50

Ω system.

Figure 1: Block Diagram

AW

T6307R

AW

T630

7R

Bias Control

GND

1

7

8

6

GND at slug (pad)

3

4

2

GND

5