32

VTB Process Photodiodes

VTB5051UV

PRODUCT DESCRIPTION

Planar silicon photodiode in a dual lead TO-5

package with a UV transmitting “flat” window.

Chip is common to the case. These diodes have

very high shunt resistance and have good blue

response.

CASE 14

TO-5 HERMETIC

ABSOLUTE MAXIMUM RATINGS

Storage Temperature:

-40°C to 110°C

Operating Temperature:

-40°C to 110°C

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

VTB5051UV

UNITS

Min.

Typ.

Max.

Short Circuit Current

H = 100 fc, 2850 K

85

130

µA

2850 K

.12

.23

%/°C

Open Circuit Voltage

H = 100 fc, 2850 K

490

mV

2850 K

-2.0

mV/°C

Dark Current

H = 0, VR = 2.0 V

250

pA

Shunt Resistance

H = 0, V = 10 mV

.56

G

Ω

H = 0, V = 10 mV

-8.0

%/°C

Junction Capacitance

H = 0, V = 0

3.0

nF

Sensitivity

365 nm

0.1

A/W

Sensitivity

220 nm

.038

A/W

λ

range

Spectral Application Range

200

1100

nm

λ

p

Spectral Response - Peak

920

nm

Breakdown Voltage

2

40

V

θ

1/2

Angular Resp. - 50% Resp. Pt.

±50

Degrees

NEP

Noise Equivalent Power

D*

Specific Detectivity

/ W

WHz

⁄

cm Hz

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto