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SP8M2 Datasheet(PDF) 1 Page - Rohm |
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SP8M2 Datasheet(HTML) 1 Page - Rohm |
1 / 4 page SP8M2 Transistors 1/3 4V Drive Nch+Pch MOS FET SP8M2 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET / Silicon P-channel MOS FET Features 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small surface mount package (SOP8). Applications Each lead has same dimensions SOP8 5.0 1.27 0.2 1.75 (1) (4) (8) (5) 0.4 1pin mark Switching Package specifications Inner circuit (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗2 ∗1 (8) (7) (1) (2) ∗2 ∗1 (6) (5) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Package Code Taping Basic ordering unit (pieces) SP8M2 TB 2500 Type Absolute maximum ratings (Ta=25 °C) Parameter VDSS Symbol VGSS ID IDP IS ISP PD °C Tch 150 °C Tstg −55 to +150 Tr1 : N-ch Tr2 : P-ch Limits Unit ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board. Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Continuous Pulsed Continuous Source current (Body diode) Pulsed ∗1 V 30 V A A A A W / TOTAL ∗2 ∗1 20 ±3.5 ±14 1.6 14 2.0 −30 −20 ±3.5 ±14 −1.6 −14 |
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