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GaAlAs Infrared Emitting Diodes

T-1¾ (5 mm) Plastic Package — 880 nm

VTE1281-1, -2

CASE 26

T-1¾ (5 mm)

CHIP SIZE: .015" x .015"

DESCRIPTION

This narrow beam angle 5 mm diameter plastic packaged emitter contains a medium area, single wirebonded, GaAlAs, 880 nm, high

efficiency IRED chip. It is designed to be cost effective in moderate pulse drive applications.

Maximum Temperatures

Storage and Operating:

-40°C to 100°C

Continuous Power Dissipation:

200 mW

Derate above 30°C:

2.86 mW/°C

Maximum Continuous Current:

100 mA

Derate above 30°C:

1.43 mA/°C

Peak Forward Current, 10 µs, 100 pps:

2.5 A

Temp. Coefficient of Power Output (Typ.):

-.8%/°C

Maximum Reverse Voltage:

5.0V

10 µA

Peak Wavelength (Typical):

880 nm

Junction Capacitance @ 0V, 1 MHz (Typ.):

23 pF

Rise: 1.0 µs

Fall: 1.0 µs

Lead Soldering Temperature:

260°C

(1.6 mm from case, 5 seconds max.)

Refer to General Product Notes, page 2.

Part Number

Output

Forward Drop

Half Power Beam

Angle

Irradiance

Radiant

Intensity

Total Power

Test

Current

Condition

θ

1/2

distance

Diameter

mW/sr

mW

mA

(Pulsed)

Volts

Typ.

Min.

Typ.

mm

mm

Min.

Typ.

Typ.

Max.

VTE1281-1

2.5

3.3

36

6.4

32

20

100

1.5

2.0

±10°

VTE1281-2

5.0

6.5

36

6.4

65

25

100

1.5

2.0

±10°

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto