KST-H038-003

3

STK0765F

Electrical Characteristics

(Tc=25

°C)

Characteristic

Symbol

Test Condition

Min. Typ. Max. Unit

Drain-source breakdown voltage

650

-

-

V

Gate threshold voltage

2.0

-

4.0

V

Drain-source cut-off current

-

-

10

µA

Gate leakage current

-

-

±100

nA

Static drain-source on-resistance ④

-

-

1.2

Ω

Forward transfer conductance

④

3.9

6.4

-

S

Input capacitance

-

881

-

Output capacitance

-

123

-

Reverse transfer capacitance

-

19

-

pF

Turn-on delay time

-

18

-

Rise time

-

19

-

Turn-off delay time

-

72

-

Fall time

Fig. 13

-

28

-

ns

Total gate charge

-

49

-

Gate-source charge

-

8.4

-

Gate-drain charge

Fig. 12

-

22.1

-

nC

Source-Drain Diode Ratings and Characteristics

Characteristic

Symbol

Test Condition

Min

Typ

Max

Units

Source current (DC)

-

-

7

Source current (Pulsed)

①

Integral reverse diode

in the MOSFET

-

-

28

A

Diode forward voltage

④

-

-

1.4

V

Reverse recovery time

-

320

-

ns

Reverse recovery charge

-

2.4

-

uC

Note ;

①

Repetitive rating : Pulse width limited by maximum junction temperature

②

③

④

Essentially independent of operating temperature