HMD1M32M2EG-50 datasheet(5/7 Pages) HANBIT

Part #	HMD1M32M2EG-50

Description	4Mbyte(1Mx32) EDO Mode, 1K Refresh, 72Pin SIMM, 5V Design

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Manufacturer	HANBIT [Hanbit Electronics Co.,Ltd]

Direct Link	http://www.hbe.co.kr

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HANBit

HMD1M32M2EG

URL:www.hbe.co.kr

- 5 -

HANBiT Electronics Co., Ltd

.

REV. 1.0 (August. 2002)

READ, WRITE AND REFRESH CYCLE (Common Parameters)

HMD1M32M2G-6

HMD1M32M2G-7

SYMBOL

PARAMETER

MIN

MAX

MIN

MAX

UNIT

NOTE

tRC

Random Read or Write Cycle Time

110

-

130

-

ns

tPR

/RAS Precharge Time

40

-

50

-

ns

tRAS

/RAS Pulse Width

60

10K

70

10K

ns

tCAS

/CAS Pulse Width

15

10K

18

10K

ns

tASR

Row Address Setup Time

0

-

0

-

ns

tRAH

Row Address Hold Time

10

-

10

-

ns

tASC

Column Address Setup Time

0

-

0

-

ns

tcah

Column Address Hold Time

10

-

15

-

ns

9

tRCD

/RAS to /CAS Delay Time

20

45

20

52

ns

10

tRAD

/RAS to Column Address Delay Time

15

30

15

35

ns

tRSH

/RAS Hold Time

15

-

18

-

ns

tCSH

/CAS Hold Time

60

-

70

-

ns

tCRP

/CAS to /RAS Precharge Time

5

-

5

-

ns

tT

Transition Time (Rise and Fall)

3

50

3

50

ns

8

tREF

Refresh Period (1024 Cycle)

-

16

-

16

ms

Read Cycle

HMD1M32M2G-6

HMD1M32M2G-7

SYMBOL

PARAMETER

MIN

MAX

MIN

MAX

UNIT

NOTE

tRAC

Access Time from /RAS

-

60

-

70

ns

2,3

tCAC

Access Time from /CAS

-

15

-

18

ns

3,4

tAA

Access Time from Column Address

-

30

-

35

ns

3,5,14

tRCS

Read Command Setup Time

0

-

0

-

ns

tRCH

Read Command Hold Time to /CAS

0

-

0

-

ns

6

tRRH

Read Command Hold Time to /RAS

0

-

0

-

ns

6

tRAL

Column Address to /RAS Lead Time

30

-

35

-

ns

tOFF

Output Buffer Turn-off Time

-

15

-

15

ns

7

Write Cycle

HMD1M32M2G-6

HMD1M32M2G-7

SYMBOL

PARAMETER

MIN

MAX

MIN

MAX

UNIT

NOTE

twcs

Write Command Setup Time

0

-

0

-

ns

11

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