HANBit

HMD4M1Z1

URL:www.hbe.co.kr

HANBit Electronics Co.,Ltd.

REV.1.0 (August. 2002)

4

Read Command Hold Time to /CAS

0

0

ns

8

Read Command Hold Time to /RAS

0

0

ns

8

Write Command Hold Time

10

10

ns

Write Command Pulse Width

10

10

ns

Write Command to /RAS Lead Time

15

15

ns

Write Command to /CAS Lead Time

13

15

ns

Data-in Setup Time

0

0

ns

9

Data-in Hold Time

10

10

ns

9

Refresh Period (1024 Cycle)

16

16

ms

Write Command Setup Time

0

0

ms

7

/CAS to /WE delay time

15

15

ms

7,13

/RAS to /WE delay time

50

60

ns

7

Column Address to /WE delay time

25

30

ns

7

/CAS precharge to /WE delay time

30

35

ns

7

/CAS Setup Time

(/CAS-before-/RAS Refresh Cycle)

10

10

ns

15

/CAS Hold Time

(/CAS-before-/RAS Refresh Cycle)

10

10

ns

16

/RAS Precharge to /CAS Hold Time

5

5

ns

Access Time from /CAS Precharge

30

35

ns

3

Fast Page Mode Cycle Time

35

40

ns

Fast Page Mode /RAS Precharge Time

10

10

ns

12

Fast Page Mode /CAS Pulse Time

50

200K

60

200K

ns

/RAS

Hold

Time

time

from

/CAS

Precharge

30

35

ns

/RAS Pulse Width(CBR self refresh)

100

100

us

/RAS Precharge Time(CBR self refresh)

90

110

ns

/CAS Hold Time(CBR self refresh)

-50

-50

ns

Note:

1. An initial pause of 200us is required after power-up followed by any 8 /RAS-only refresh or /CAS-before-/RAS refresh

cycles

before proper device operation is achieved.

3. Measured with a load circuit equivalent to 2TTL loads and 100pF.