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HMD4M32M2G Datasheet(PDF) 4 Page - Hanbit Electronics Co.,Ltd |
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HMD4M32M2G Datasheet(HTML) 4 Page - Hanbit Electronics Co.,Ltd |
4 / 7 page HANBit HMD4M32M2G URL:www.hbe.co.kr - 4 - HANBit Electronics Co.,Ltd. REV.1.0 (August.2002) ICC3 : /RAS Only Refresh Current * ( /CAS=VIH, /RAS, Address cycling @tRC=min ) ICC4 : Fast Page Mode Current * (/RAS=VIL, /CAS, Address cycling @tPC=min ) ICC5 : Standby Current (/RAS=/CAS=Vcc-0.2V ) ICC6 : /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @tRC=min ) IIL : Input Leakage Current (Any input 0V ≤ VIN ≤ 6.5V, all other pins not under test = 0V) IOL : Output Leakage Current (Data out is disabled, 0V ≤ VOUT ≤ 5.5V VOH : Output High Voltage Level (IOH= -5mA ) VOL : Output Low Voltage Level (IOL = 4.2mA ) * NOTE: ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1 and ICC3, address cad be changed maximum once while /RAS=VIL. In ICC4, address can be changed maximum once within one page mode cycle. CAPACITANCE ( T A=25 o C, Vcc = 5V, f = 1Mz ) DESCRIPTION SYMBOL MIN MAX UNITS Input Capacitance (A0-A10) CIN1 - 64 pF Input Capacitance (/W) C IN2 - 70 pF Input Capacitance (/RAS0) CIN3 - 42 pF Input Capacitance (/CAS0-/CAS3) CIN4 - 30 pF Input/Output Capacitance (DQ0-31) CDQ1 - 17 pF AC CHARACTERISTICS ( 0 o C ≤ T A ≤ 70 oC , Vcc = 5V±10%, See notes 1,2.) -5 -6 STANDARD OPERATION SYMBOL MIN MAX MIN MAX UNIT Random read or write cycle time tRC 90 110 ns Access time from /RAS tRAC 50 60 ns Access time from /CAS tCAC 13 15 ns Access time from column address tAA 25 30 ns /CAS to output in Low-Z tCLZ 3 3 ns Output buffer turn-off delay from /CAS tCEZ 3 13 3 15 ns Transition time (rise and fall) tT 2 50 2 50 ns /RAS precharge time tRP 30 40 ns /RAS pulse width tRAS 50 10K 60 10K ns /RAS hold time tRSH 13 15 ns /CAS hold time tCSH 38 45 ns /CAS pulse width tCAS 8 10K 10 10K ns /RAS to /CAS delay time tRCD 20 37 20 45 ns /RAS to column address delay time tRAD 15 25 15 30 ns /CAS to /RAS precharge time tCRP 5 5 ns |
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