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HMD4M36M3E Datasheet(PDF) 5 Page - Hanbit Electronics Co.,Ltd

Part # HMD4M36M3E
Description  16Mbyte(4Mx36) 72-pin SIMM EDO with Parity MODE, 4K Ref. 5V
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Manufacturer  HANBIT [Hanbit Electronics Co.,Ltd]
Direct Link  http://www.hbe.co.kr
Logo HANBIT - Hanbit Electronics Co.,Ltd

HMD4M36M3E Datasheet(HTML) 5 Page - Hanbit Electronics Co.,Ltd

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HANBit
HMD4M36M3EG
URL:www.hbe.co.kr
HANBit Electronics Co.,Ltd.
REV.1.0 (August.2002)
5
Column address set-up time
tASC
0
0
ns
Column address hold time
tCAH
8
10
ns
Column Address to /RAS lead time
tRAL
25
30
ns
Read command set-up time
tRCS
0
0
ns
Read command hold referenced to /CAS
tRCH
0
0
ns
Read command hold referenced to /RAS
tRRH
0
0
ns
Write command hold time
tWCH
10
10
ns
Write command hold referenced to /RAS
tWCR
50
50
ns
Write command pulse width
tWP
10
10
ns
Write command to /RAS lead time
tRWL
13
15
ns
Write command to /CAS lead time
tCWL
8
10
ns
Data-in set-up time
tDS
0
0
ns
Data-in hold time
tDH
8
10
ns
Data-in hold referenced to /RAS
tDHR
50
50
ns
Refresh period
tREF
64
64
ns
Write command set-up time
tWCS
0
0
ns
/CAS setup time (C-B-R refresh)
tCSR
5
5
ns
/CAS hold time (C-B-R refresh)
tCHR
10
10
ns
/RAS precharge to /CAS hold time
tRPC
5
5
ns
Access time from /CAS precharge
tCPA
30
35
ns
Fast page mode cycle time
tPC
40
40
ns
/CAS precharge time (Fast page)
tCP
8
10
ns
/RAS pulse width (Fast page )
tRASP
50
200K
60
200K
ns
/W to /RAS precharge time (C-B-R refresh)
tWRP
10
10
ns
/W to /RAS hold time (C-B-R refresh)
tWRH
10
10
ns
/CAS precharge(C-B-R counter test)
tCPT
20
20
ns
NOTES
1.An initial pause of 200
µs is required after power-up followed by any 8 /RAS-only or /CAS-before-/RAS refresh cycles
before proper device operation is achieved.
2.VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between
VIH(min) and VIL(max) and are assumed to be 5ns for all inputs.
3.Measured with a load equivalent to 2TTL loads and 100pF
4.Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only. If tRCD
is greater than the specified tRCD(max) limit, then access time is controlled exclusively by tCAC.
5.Assumes that tRCD ≥ tRCD(max)
6. tAR, tWCR, tDHR are referenced to tRAD(max)
7.This parameter defines the time at which the output achieves the open circuit condition and is not referenced to VOH or
VOL.
8. tWCS, tRWD, tCWD and tAWD are non restrictive operating parameter.
They are included in the data sheet as electrical characteristic only. If tWCS tWCS(min) the cycle is an early write
cycle and the data out pin will remain high impedance for the duration of the cycle.
9. Either tRCH or tRRH must be satisfied for a read cycle.
10. These parameters are referenced to the /CAS leading edge in early write cycles and to the /W leading edge in read-
write cycles.
11. Operation within the tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as a reference
point only. If tRAD is greater than the specified tRAD(max) limit. then access time is controlled by tAA.


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