V53C1256164VALT10EPC datasheet(9/46 Pages) ETC1

Part #	V53C1256164VALT10EPC

Description	256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16

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V55C2256164VB Rev. 1.0 April 2005

ProMOS TECHNOLOGIES

V55C2256164VB

A12 to A5

A3

A4

A2

A1

A0

Address Bus (Ax)

TCR

PASR

Mode Register

A4

A3

Max case temp

00

70OC

01

45OC

10

15OC

11

85OC

all have to be set to "0"

BA0

BA1

Partial-Array Self Refresh:

A2

A1

A0

banks to be self-refreshed

0

all banks

0

1

1/2 array (BA1=0)

0

1

0

1/4 array (BA1=0, BA0=0)

0

1

Reserved

1

0

Reserved

1

0

1

1/8 array (BA1=BA0=0, A11=0)

1

0

1/16 array (BA1=BA0=0,

A11=A10=0)

1

Reserved

1*)

0*)

Temperature-Compensated

Self-Refresh:

*)BA1 and BA0 must be 1, 0 to select the Extended Mode Register (Vs. the Mode Register)

The Low Power Mode Register must be set during the initialization sequence. Once the device is operational, the

Low Power Mode Register set can be issued anytime when the part is idle.

Low Power Mode Register Table

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Manufacturer	Part #	Datasheet	Description
Emerging Memory & Logic...	EMD56164P	770Kb / 45P	256M: 16M x 16 Mobile DDR SDRAM
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Samsung semiconductor	K4S560432A	127Kb / 10P	256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL
Mosel Vitelic, Corp	V826516K04S	159Kb / 13P	2.5 VOLT 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE
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V53C1256164VALT10EPC Datasheet(PDF) 9 Page - List of Unclassifed Manufacturers

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