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1PS70SB10 Datasheet(PDF) 3 Page - NXP Semiconductors

Part # 1PS70SB10
Description  Schottky barrier double diodes
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

1PS70SB10 Datasheet(HTML) 3 Page - NXP Semiconductors

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1999 Apr 26
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
1PS70SB10; 1PS70SB14;
1PS70SB15; 1PS70SB16
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
Note
1. Pulse test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323 (SC70) standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
30
V
IF
continuous forward current
200
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
300
mA
IFSM
non-repetitive peak forward current
tp <10ms
600
mA
Ptot
total power dissipation (per package)
Tamb <25 °C
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
125
°C
Tamb
operating ambient temperature
−65
+125
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
VF
continuous forward voltage
see Fig.6
IF = 0.1 mA
240
mV
IF = 1 mA
320
mV
IF = 10 mA
400
mV
IF = 30 mA
500
mV
IF = 100 mA
800
mV
IR
continuous reverse current
VR = 25 V; note 1; see Fig.7
2
µA
Cd
diode capacitance
VR = 1 V; f = 1 MHz; see Fig.8
10
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
625
K/W


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