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HMN1M8D-150I Datasheet(PDF) 6 Page - Hanbit Electronics Co.,Ltd |
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HMN1M8D-150I Datasheet(HTML) 6 Page - Hanbit Electronics Co.,Ltd |
6 / 9 page HANBit HMN1M8D URL : www.hbe.co.kr 6 HANBit Electronics Co.,Ltd Rev. 0.0 (April, 2002) POWER-DOWN/POWER-UP CYCLE (TA= TOPR, VCC=5V) PARAMETER SYMBOL CONDITIONS MIN TYP. MAX UNIT VCC slew, 4.75 to 4.25V tPF 300 - - ㎲ VCC slew, 4.75 to VSO tFS 10 - - ㎲ VCC slew, VSO to VPFD (max) tPU 0 - - ㎲ Chip enable recovery time tCER Time during which SRAM is write-protected after VCC passes VPFD on power-up. 40 80 120 ms Data-retention time in Absence of VCC tDR TA = 25℃ 5 - - years Write-protect time tWPT Delay after Vcc slews down past VPFD before SRAM is Write-protected. 40 100 150 ㎲ TIMING WAVEFORM - READ CYCLE NO.1 (Address Access)*1,2 - READ CYCLE NO.2 (/CE Access)*1,3,4 Address DOUT Data Valid tOH tACC tRC Previous Data Valid tACE tCLZ tRC tCHZ /CE High-Z High-Z DOUT |
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