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2N2484 Datasheet(PDF) 2 Page - NXP Semiconductors |
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2N2484 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1997 May 01 2 Philips Semiconductors Product specification NPN general purpose transistor 2N2484 FEATURES • Low current (max. 50 mA) • Low voltage (max. 60 V) APPLICATIONS • General purpose switching and amplification • High performance (low-level), low-noise amplifier applications both for direct current and frequencies up to 100 MHz. DESCRIPTION NPN transistor in a TO-18; SOT18 metal package. PINNING PIN DESCRIPTION 1 emitter 2 base 3 collector, connected to the case Fig.1 Simplified outline (TO-18; SOT18) and symbol. handbook, halfpage MAM264 1 3 2 3 1 2 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 60 V VCEO collector-emitter voltage open base −− 60 V ICM peak collector current −− 100 mA Ptot total power dissipation Tamb ≤ 25 °C −− 360 mW hFE DC current gain IC =10 µA; VCE = 5 V 100 − 500 IC = 1 mA; VCE = 5 V 250 −− IC = 10 mA; VCE =5V −− 800 fT transition frequency IC = 0.5 mA; VCE = 5 V; f = 100 MHz 60 80 − MHz |
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