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HMN4M8DV-120 Datasheet(PDF) 4 Page - Hanbit Electronics Co.,Ltd

Part # HMN4M8DV-120
Description  Non-Volatile SRAM MODULE 32Mbit (4,096K x 8-Bit), 40Pin-DIP, 3.3V
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Manufacturer  HANBIT [Hanbit Electronics Co.,Ltd]
Direct Link  http://www.hbe.co.kr
Logo HANBIT - Hanbit Electronics Co.,Ltd

HMN4M8DV-120 Datasheet(HTML) 4 Page - Hanbit Electronics Co.,Ltd

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HANBit
HMN4M8DV(N)
URL : www.hbe.co.kr
4
HANBit Electronics Co.,Ltd
Rev. 1.0 (May, 2002)
CAPACITANCE (TA=25℃ , f=1MHz)
DESCRIPTION
CONDITIONS
SYMBOL
MAX
MIN
UNIT
Input Capacitance
Input voltage = 0V
CIN
8
-
pF
Input/Output Capacitance
Output voltage = 0V
CI/O
10
-
pF
NOTE: 1. Capacitance is sampled, not 100% tested.
DC AND OPERATION CHARACTERISTICS (TA= TOPR, VCCmin £ VCC≤ VCCmax )
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP.
MAX
UNI
T
Input Leakage Current
VIN=VSS to VCC
ILI
-4
-
+4
mA
Output Leakage Current
/CE=VIH or /OE=VIH or /WE=VIL
ILO
-4
-
+4
mA
Output high voltage
IOH=-1.0 mA
VOH
2.4
-
-
V
Output low voltage
IOL= 2.1 mA
VOL
-
-
0.4
V
Standby supply current
/CE≥ VCC-0.2V
ISB1
-
-
80
mA
Cycle time=Min, 100% duty,
II/O=0㎃ ,
/CE<Vcc-0.2V,
VIN<0.2V or VIN>VCC-0.2V
ICC1
-
-
12
㎃
Average operating current
Cycle time=1us, 100% duty,
II/O=0㎃ ,
/CE=VIL, VIN=VIL or VIH
ICC2
-
-
50
㎃
Power-fail-detect voltage
VPFD
2.5
2.6
2.7
V
Supply switch-over voltage
VSO
-
3
-
V
CHARACTERISTICS (Test Conditions)
PARAMETER
VALUE
Input pulse levels
0 to 3V
Input rise and fall times
< 5 ns
Input and output timing
reference levels
1.5V
( unless otherwise specified)
Output load
(including scope and jig)
See Figure 1 and 2
DOUT
DOUT
+5V
+5V
1KΩ
1KΩ
1.9KΩ
1.9KΩ
5㎊
100㎊
Figure 1.
Output Load A
Figure 2.
Output Load B


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