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2N3019 Datasheet(PDF) 2 Page - NXP Semiconductors |
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2N3019 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page  1997 Jun 19 2 Philips Semiconductors Product specification NPN medium power transistor 2N3019 FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Amplifier and switching circuits. DESCRIPTION NPN medium power transistor in a TO-39 metal package. PINNING PIN DESCRIPTION 1 emitter 2 base 3 collector, connected to case Fig.1 Simplified outline (TO-39) and symbol. handbook, halfpage 3 1 2 MAM317 1 2 3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 140 V VCEO collector-emitter voltage open base − 80 V IC collector current (DC) − 1A Ptot total power dissipation Tamb ≤ 25 °C − 800 mW Tcase ≤ 25 °C − 5W hFE DC current gain IC = 150 mA; VCE = 10 V 100 300 fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 100 − MHz |
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