NPN EPITAXIAL PLANAR SILICON TRANSISTOR

CMBT847

SOT23

MARKING: AS BELOW

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

50

V

Collector -Emitter Voltage

VCEO

50

V

Emitter Base Voltage

VEBO

6.0

V

Collector Current

IC

200

mA

Collector Power Dissipation

PC

150

mW

Operating And Storage Junction

Tj, Tstg

-55 to +150

deg C

Temperature Range

ELECTRICAL CHARACTERISTICS (Ta= 25 deg C unless otherwise specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

Collector -Emitter Voltage

VCEO

IC=100uA, IB=0

50

-

-

V

Collector Cut off Current

ICBO

VCB=50V, IE=0

-

-

100

nA

Emitter Cut off Current

IEBO

VEB=6V, IC=0

-

-

100

nA

DC Current Gain

hFE(1)

IC=1mA,VCE=6V

150

-

800

hFE(2)

IC=0.1mA,VCE=6V

50

-

-

Collector Emitter Saturation Voltage

VCE(Sat) IC=100mA,IB=10mA

-

-

0.30

V

Base Emitter Saturation Voltage

VBE(Sat) IC=100mA,IB=10mA

-

-

1.0

V

Dynamic Characteristics

Transition Frequency

ft

VCE=6V,IC=10mA,

-

200

-

MHz

Collector Output Capacitance

Cob

VCB=6V, IE=0

-

2.5

-

pF

f=1MHz

Noise Figure

NF

VCE=6V, IE=0.1mA

-

-

15

dB

f=1kHz, Rg=2kohms

CLASSIFICATION

E

F

G

hFE(1)

150-300

250-500

400-800

MARKING

NE

NF

NG

PIN CONFIGURATION (NPN)

1 = BASE

2 = EMITTER

3 = COLLECTOR

2

1

3

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company