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CMBT2484 Datasheet(PDF) 1 Page - Continental Device India Limited |
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CMBT2484 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 3 page  NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 MARKING: 1U LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 60 V Collector -Emitter Voltage VCEO 60 V Emitter Base Voltage VEBO 6 V Collector Current -Continuous IC 50 mA Device Dissipation FR-5 Board* PD 225 mW Derate above 25 deg C 1.8 mW/deg C Thermal Resistance Junction to Ambient Rth (j-a) 556 deg C/W Device Dissipation Alumina Substrate** PD 300 mW Derate above 25 deg C 2.4 mW/deg C Thermal Resistance Junction to Ambient Rth (j-a) 417 deg C/W Junction and Storage Temperature Range Tj,Tstg -55 to +150 deg C *FR-5=1.0X0.75X0.062 in **Alumine=0.4x0.3x0.024 in 99.5% alumina. ELECTRICAL CHARACTERISTICS (TA=25 deg C unless otherwise noted) CHARACTERISTICS SYMBOL TEST CONDITION MIN TYP MAX UNIT Collector -Emitter Voltage VCEO IC=10mA, IB=O 60 - - V Collector -Base Voltage VCBO IC=10uA, IE=0 60 - - V Emitter Base Voltage VEBO IE=10uA, IC=0 6.0 - - V Collector Cut off Current ICBO VCB=45V, IE=0 - - 10 nA VCB=45V, IE=0 - - 10 uA TA=150 deg C Emitter Cut off Current IEBO VEB=5V, IC=0 - - 10 nA DC Current Gain hFE IC=1mA, VCE=5V 250 - - IC=10mA, VCE=5V - - 800 Collector Emitter Saturation Voltage VCE(Sat) IC=1mA,IB=0.1mA - - 0.35 V Base Emitter On Voltage VBE(on) IC=1mA, VCE=5V - - 0.95 V SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo VCB=5V, IE=0 - - 6.0 pF f=1MHz Input Capacitance Cibo VBE=0.5V, IC=0 - - 9.0 pF f=1MHz Noise Figure NF IC=10uA, VCE=5V - - 4.0 dB RS=10 kohms f=1kHz, BW=200Hz PIN CONFIGURATION (NPN) 1 = BASE 2 = EMITTER 3 = COLLECTOR 2 1 3 Continental Device India Limited Data Sheet Page 1 of 3 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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Similar Description - CMBT2484 |
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