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2N3906 Datasheet(PDF) 2 Page - NXP Semiconductors |
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2N3906 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1999 Apr 23 2 Philips Semiconductors Product specification PNP switching transistor 2N3906 FEATURES • Low current (max. 200 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching in industrial applications. DESCRIPTION PNP switching transistor in a TO-92; SOT54 plastic package. NPN complement: 2N3904. PINNING PIN DESCRIPTION 1 collector 2 base 3 emitter Fig.1 Simplified outline (TO-92; SOT54) and symbol. handbook, halfpage1 3 2 MAM280 1 2 3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter −−40 V VCEO collector-emitter voltage open base −−40 V VEBO emitter-base voltage open collector −−6V IC collector current (DC) −−200 mA ICM peak collector current −−300 mA IBM peak base current −−100 mA Ptot total power dissipation Tamb ≤ 25 °C − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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