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2N3906 Datasheet(PDF) 4 Page - NXP Semiconductors |
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2N3906 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 8 page  1999 Apr 23 4 Philips Semiconductors Product specification PNP switching transistor 2N3906 Fig.2 DC current gain; typical values. handbook, full pagewidth 0 80 160 hFE 40 120 MGD835 −10−2 −10−1 −1 IC (mA) −10 −102 −103 VCE =1V. Vi = −5 V; T = 500 µs; tp =10 µs; tr =tf ≤ 3 ns. R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω. VBB = 1.9 V; VCC = −3V. Oscilloscope input impedance Zi =50 Ω. Fig.3 Test circuit for switching times. ndbook, full pagewidth RC R2 R1 DUT MGD624 Vo RB (probe) 450 Ω (probe) 450 Ω oscilloscope oscilloscope VBB Vi VCC |
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