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CMBTA05 Datasheet(PDF) 2 Page - Continental Device India Limited

Part # CMBTA05
Description  SILICON EPITAXIAL TRANSISTORS
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

CMBTA05 Datasheet(HTML) 2 Page - Continental Device India Limited

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Continental Device India Limited
Data Sheet
Page 2 of 3
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
VCBO
max.
60
80 V
Collector–emitter voltage (open base)
VCEO
max.
60
80 V
Emitter–base voltage (open collector)
VEBO
max.
4
V
Collector current (d.c.)
IC
max.
500
mA
Total power dissipation up to Tamb = 25 °C Ptot
max.
250
mW
Storage temperature
Tstg
max.
–55 to +150
° C
Junction temperature
Tj
max.
150
° C
THERMAL CHARACTERISTICS
Tj = P (Rth j–t + Rth t–s + Rth s–a) + Tamb
Thermal resistance
from junction to ambient
Rth j–a
=
500
K/W
CHARACTERISTICS (at TA = 25°C unless otherwise specified)
CMBT A05
A06
Collector–emitter breakdown voltage
IC = 1 mA; IB = 0
V(BR)CEO min.
60
80 V
Emitter–base breakdown voltage
IC = 0; IE = 100 µAV(BR)EBO min.
4
V
Collector cut–off current
VCE = 60 V; IB = 0
ICEO
max.
0.1
µA
VCB = 60 V; IE = 0
ICBO
max. 0.1
µA
VCB = 80 V; IE = 0
ICBO
max.
0.1
µA
Saturation voltages
IC = 100 mA; IB = 10 mA
VCEsat
max.
0.25
V
Base–emitter on voltage
IC = 100 mA; VCE = 1 V
VBE(on)
max.
1.2
V
D.C. current gain
IC = 10 mA; VCE = 1 V
hFE
min.
100
IC = 100 mA; VCE = 1 V
hFE
min.
100
Transition frequency at f = 100 MHz
IC = 10 mA; VCE = 2 V
fT
min.
100
MHz
CMBTA05
CMBTA06


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