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HMS1M32Z8S-10 Datasheet(PDF) 8 Page - Hanbit Electronics Co.,Ltd |
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HMS1M32Z8S-10 Datasheet(HTML) 8 Page - Hanbit Electronics Co.,Ltd |
8 / 10 page HANBit HMS1M32M8S HANBit Electronics Co.,Ltd. 8 4. tAS is measured from the address valid to the beginning of write. 5. tWR is measured from the end of write to the address change. tWR applied in case a write ends as /CE, or /WE going high. 6. If /OE,/CE and /WE are in the read mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase of the output must not be applied because bus contention can occur. 7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle. 8. If /CE goes low simultaneously with /WE going low or after /WE going low, the outputs remain high impedance state. 9. DOUT is the read data of the new address. 10. When /CE is low: I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be applied. FUNCTIONAL DESCRIPTION /CE /WE /OE MODE I/O PIN SUPPLY CURRENT H X* X Not Select High-Z I SB, I SB1 L H H Output Disable High-Z ICC LH L Read DOUT ICC L L X Write DIN ICC Note: X means Don't Care |
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