TIP122F datasheet(1/3 Pages) CDIL | NPN/PNP SILICON POWER DARLINGTON TRANSISTORS

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NPN/PNP SILICON POWER DARLINGTON TRANSISTORS

TIP122F NPN

TIP127F PNP

TO-220FP

Designed for General-Purpose Amplifier and Low-Speed Switching Applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Base Voltage

VCBO

100

Collector -Emitter Voltage

VCEO

100

Emitter Base Voltage

VEBO

5.0

Collector Current -Continuous

5.0

Collector Current (Peak)

ICM

8.0

Base Current

120

Total Power Dissipation @ Tc=25 deg C

Derate Above 25 deg C

0.52

W/deg C

Total Power Dissipation @ Ta=25 deg C

2.0

Derate Above 25 deg C

0.016

W/deg C

Unclamped Inductive Load Energy (1)

E50

Junction Temperature

150

deg C

Storage Temperature Range

Tstg

-65 to +150

deg C

THERMAL RESISTANCE

From Junction to Ambient

Rth(j-a)

62.5

deg C/W

From Junction to Case

Rth(j-c)

1.92

deg C/W

(1) IC=1A, L=100mH,P.R.F.=10Hz, VCC=20V, RBE=100 ohms

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

MAX

UNIT

Collector Emitter (sus) Voltage

VCEO (sus) * IC=100mA, IB=0

100

Collector Cut off Current

ICBO

VCB=100V, IE=0

0.2

ICEO

IB=O, VCE=50V

0.5

Emitter Cut off Current

IEBO

VEB=5V,IC=0

2.0

Collector Emitter Saturation Voltage

VCE(Sat)*

IC=3A, IB=12mA

2.0

IC=5A, IB=20mA

4.0

Base Emitter on Voltage

VBE(on) *

IC=3A, VCE=3V

2.5

DC Current Gain

hFE*

IC=0.5A, VCE=3V

1.0

IC=3A, VCE=3V

1.0

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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