HSD8M32F4V datasheet(4/11 Pages) HANBIT

Part #	HSD8M32F4V

Description	Synchronous DRAM Module 32Mbyte ( 8M x 32-Bit ) SMM based on 8Mx8, 4Banks, 4K Ref., 3.3V

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Manufacturer	HANBIT [Hanbit Electronics Co.,Ltd]

Direct Link	http://www.hbe.co.kr

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HANBit

HSD8M32F4V/VA

URL:www.hbe.co.kr

4

HANBit Electronics Co.,Ltd.

REV.1.0 (August.2002)

DC OPERATING CONDITIONS

(Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70

° C) )

PARAMETER

SYMBOL

MIN

TYP.

MAX

UNIT

NOTE

Supply Voltage

Vcc

3.0

3.3

3.6

V

Input High Voltage

VIH

2.0

3.0

Vcc+0.3

V

1

Input Low Voltage

VIL

-0.3

0

0.8

V

2

Output High Voltage

VOH

2.4

-

V

IOH = -2mA

Output Low Voltage

VOL

-

0.4

V

IOL = 2mA

Input leakage current

I LI

-10

-

10

uA

3

Notes :

1. VIH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.

2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.

3. Any input 0V

≤ V

IN ≤ VDDQ.

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.

CAPACITANCE

(VCC = 3.3V, TA = 23

° C, f = 1MHz, VREF =1.4V ± 200 mV)

DESCRIPTION

SYMBOL

MIN

MAX

UNITS

Clock

CCLK

2.5

1.6

pF

/RAS, /CAS,/WE,/CS, CKE, DQM

CIN

2.5

20.0

pF

Address

CADD

2.5

20.0

pF

DQ (DQ0 ~ DQ7)

COUT

4.0

26.0

pF

DC CHARACTERISTICS

(Recommended operating condition unless otherwise noted, TA = 0 to 70

° C)

VERSION

PARAMETER

SYMBOL

TEST

CONDITION

-13

-12

-10

-10L

UNIT

NOTE

Operating current

(One bank active)

ICC1

Burst length = 1

tRC ≥ tRC(min)

IO = 0mA

300

280

mA

1

ICC2P

CKE

≤ V

IL(max)

tCC=10ns

4

mA

Precharge standby current in

power-down mode

ICC2PS

CKE & CLK

≤ V

IL(max)

tCC=∞

4

mA

Precharge standby current in

non power-down mode

ICC2N

CKE

≥ V

IH(min)

CS*

≥ V

IH(min),

tCC=10ns

Input signals are changed

one time during 20ns

60

mA

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