HANBit

HSD8M32B4

URL:www.hbe.co.kr

HANBit Electronics Co.,Ltd

REV.1.0 (August.2002).

GENERAL DESCRIPTION

The HSD8M32B4 is a 8M x 32 bit Synchronous Dynamic RAM high density memory module. The module consists of

four CMOS 1M x 16 bit x 4banks Synchronous DRAMs in TSOP-II packages mounted on a 144-pin, FR-4-printed circuit

board. Two 0.01uF decoupling capacitor is mounted on the printed circuit board in parallel for each SDRAM. The

HSD8M32B4 is a SO-DIMM designed. Synchronous design allows precise cycle control with the use of system clock. I/O

transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same

device to be useful for a variety of high bandwidth, high performance memory system applications All module components

may be powered from a single 3.3V DC power supply and all inputs and outputs are LVTTL-compatible.

FEATURES

• Part Identification

HSD8M32B4-10 : 100MHz ( CL=2)

HSD8M32B4-10L : 100MHz ( CL=3)

HSD8M32B4-12 : 125MHz ( CL=3)

HSD8M32B4-13 :133MHz ( CL=3)

• Burst mode operation

• Auto & self refresh capability (4096 Cycles/64ms)

• LVTTL compatible inputs and outputs

• Single 3.3V

±0.3V power supply

• MRS cycle with address key programs

- Latency (Access from column address)

- Burst length (1, 2, 4, 8 & Full page)

- Data scramble (Sequential & Interleave)

• All inputs are sampled at the positive going edge

of the system clock

• FR4-PCB design

• The used device is K4S641632D-TC

Synchronous DRAM Module 32Mbyte ( 8M x 32-Bit ) 144pin SO-DIMM based on

4Mx16, 4Banks, 4K Ref., 3.3V

Part No.

HSD8M32B4