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2N6427 Datasheet(PDF) 3 Page - NXP Semiconductors |
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2N6427 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page  1997 Jul 04 3 Philips Semiconductors Product specification NPN Darlington transistor 2N6427 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCES collector-emitter voltage VBE =0 − 30 V VEBO emitter-base voltage open collector − 10 V IC collector current (DC) − 500 mA ICM peak collector current − 800 mA IB base current (DC) − 200 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 625 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 200 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =30V − 100 nA IE = 0; VCB =30V; Tj = 150 °C − 10 µA ICES collector cut-off current VBE = 0; IB = 0; VCE =30V − 100 nA IEBO emitter cut-off current IC = 0; VEB =10V − 100 nA hFE DC current gain VCE = 5 V; note 1 IC = 10 mA 10000 100000 IC = 100 mA 20000 200000 IC = 500 mA 14000 140000 VCEsat collector-emitter saturation voltage IC = 50 mA; IB = 0.5 mA; note 1 − 1.2 V IC = 500 mA; IB = 0.5 mA; note 1 − 1.5 V VBEsat base-emitter saturation voltage IC = 500 mA; IB = 0.5 mA; note 1 − 2V VBEon base-emitter on-state voltage IC = 50 mA; VCE =5V − 1.75 V fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 125 − MHz |
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