EM39LV088

8M Bits (1Mx8) Flash Memory

SPECIFICATION

This specification is subject to change without further notice. (04.09.2004 V1.0)

Page 9 of 22

DC CHARACTERISTICS (CMOS Compatible)

Parameter

Description

Test Conditions

Min

Max

Unit

Power Supply Current

Read

Program and Erase

30

30

mA

mA

20

µA

Input Leakage Current

Output Leakage Current

1

10

µA

µA

Input Low Voltage

Input High Voltage

Input High Voltage (CMOS)

0.8

V

V

V

Output Low Voltage

Output High Voltage

0.2

V

V

Table 5: DC Characteristics (Cmos Compatible)

Recommended System Power-up Timing

Parameter

Description

Min

Unit

Power-up to Read Operation

100

µs

Power-up to Program/Erase Operation

100

µs

could affect this parameter.

Table 6: Recommended System Power-up Timing

Capacitance (Ta=25

°C, f=1Mhz, other pins open)

Parameter

Description

Test Conditons

Max

I/O Pin Capacitance

12pF

Input Capacitance

6pF

could affect this parameter.

Table 7: Capacitance (Ta=25

°C, f=1Mhz, Other Pins Open)

Reliability Characteristics

Symbol

Parameter

Min Specification

Unit

Test Method

Endurance

10,000

Cycles

JEDEC Standard A117

Data Retention

10

Years

JEDEC Standard A103

Latch Up

mA

JEDEC Standard 78

could affect this parameter.

Table 8: Reliability Characteristics