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D3SBA10 Datasheet(PDF) 1 Page - EIC discrete Semiconductors

Part # D3SBA10
Description  SILICON BRIDGE RECTIFIER
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Manufacturer  EIC [EIC discrete Semiconductors]
Direct Link  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

D3SBA10 Datasheet(HTML) 1 Page - EIC discrete Semiconductors

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D3SBA10 ~ D3SBA80
SILICON BRIDGE RECTIFIER
PRV : 100 ~ 800 Volts
Io : 4.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Very good heat dissipation
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 4.28 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
0.303 (7.7)
0.287 (7.3)
0.075 (1.9)
0.060 (1.5)
0.043 (1.1)
0.035 (0.9)
~
~
+
0.150 (3.8)
0.134 (3.4)
0.996 (25.3)
0.972 (24.7)
C3
0.189 (4.8)
0.173 (4.4)
0.032 (0.8)
0.043 (1.1)
0.114 (2.9)
0.098 (2.5)
SYMBOL
D3SBA
10
D3SBA
20
D3SBA
40
D3SBA
60
D3SBA
80
UNIT
Maximum Reverse VoltageVRM
100
200
400
600
800V
Maximum Average Forward Current
4 (With heatsink, Tc = 108
°C)
(50Hz Sine wave, R-load)
2.3 (Without heatsink, Ta = 25
°C)
Maximum Peak Forward Surge Current
( 50 Hz, Half-cycle, Sinwave, Single Shot )
Current Squared Time at 1ms
≤ t < 10 ms, Tc=25
°C
I
2t
32
A
2S
Maximum Forward Voltage per Diode at I F = 2.0 A.VF
1.05V
Maximum DC Reverse Current, VR=VRM
( Pulse measurement, Rating of per diode)
Maximum Thermal Resistance, Junction to case
R
θJC
5.5 (With heatsink)
°C/W
Maximum Thermal Resistance, Junction to Ambient
R
θJA
30 (Without heatsink)
°C/W
Operating Junction Temperature RangeTJ
150
°C
Storage Temperature RangeTSTG
- 40 to + 150
°C
Page 1 of 2
Rev. 02 : March 25, 2005
A
A
IR
10
µA
RATING
IF(AV)
IFSM
80
* Pb / RoHS Free


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