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D3SBA10 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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D3SBA10 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page D3SBA10 ~ D3SBA80 SILICON BRIDGE RECTIFIER PRV : 100 ~ 800 Volts Io : 4.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Ideal for printed circuit board * Very good heat dissipation MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 4.28 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) 0.303 (7.7) 0.287 (7.3) 0.075 (1.9) 0.060 (1.5) 0.043 (1.1) 0.035 (0.9) ~ ~ + 0.150 (3.8) 0.134 (3.4) 0.996 (25.3) 0.972 (24.7) C3 0.189 (4.8) 0.173 (4.4) 0.032 (0.8) 0.043 (1.1) 0.114 (2.9) 0.098 (2.5) SYMBOL D3SBA 10 D3SBA 20 D3SBA 40 D3SBA 60 D3SBA 80 UNIT Maximum Reverse VoltageVRM 100 200 400 600 800V Maximum Average Forward Current 4 (With heatsink, Tc = 108 °C) (50Hz Sine wave, R-load) 2.3 (Without heatsink, Ta = 25 °C) Maximum Peak Forward Surge Current ( 50 Hz, Half-cycle, Sinwave, Single Shot ) Current Squared Time at 1ms ≤ t < 10 ms, Tc=25 °C I 2t 32 A 2S Maximum Forward Voltage per Diode at I F = 2.0 A.VF 1.05V Maximum DC Reverse Current, VR=VRM ( Pulse measurement, Rating of per diode) Maximum Thermal Resistance, Junction to case R θJC 5.5 (With heatsink) °C/W Maximum Thermal Resistance, Junction to Ambient R θJA 30 (Without heatsink) °C/W Operating Junction Temperature RangeTJ 150 °C Storage Temperature RangeTSTG - 40 to + 150 °C Page 1 of 2 Rev. 02 : March 25, 2005 A A IR 10 µA RATING IF(AV) IFSM 80 * Pb / RoHS Free |
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