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MURF1010CT Datasheet(PDF) 1 Page - EIC discrete Semiconductors

Part # MURF1010CT
Description  Dual Ultrafast Plastic Rectifiers
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Manufacturer  EIC [EIC discrete Semiconductors]
Direct Link  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

MURF1010CT Datasheet(HTML) 1 Page - EIC discrete Semiconductors

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MURF1005CT
Dual Ultrafast Plastic Rectifiers
THRU MURF1040CT
PRV : 50 - 200 Volts
Io : 10 Ampere
FEATURES :
* Ideally suited for free wheeling diode power factor
correction applications
* Soft recovery characteristics
* Excellent high temperature switching
* Glass passivated chip junction
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Epoxy, Molded
* Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
* Polarity: As marked
* Mounting Position: Any
* Weight : 2.24 grams (Approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Tc =25°C unless otherwise specified.)
MURF
1005CT 1010CT 1015CT 1020CT 1030CT 1040CT
Maximum Repetitive Peak Reverse Voltage
VRRM
50
100
150
200
300
400
V
Maximum RMS Voltage
VRMS
35
70
105
140
210
280
V
Maximum DC Blocking Voltage
VDC
50
100
150
200
300
400
V
5.0
10 (Total Device)
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage per Leg
at IF = 5 A, Tj = 25°C
VF
0.95
1.3
V
Maximum DC Reverse Current
IR
5.0 (Tc = 25°C)
µA
at Rated DC Blocking Voltage
IR(H)
500 (Tc = 100°C)
µA
Maximum Reverse Recovery Time
(IF = 0.5A, IR = 1.0A, Irr = 0.25A )
Operating storage and temperature range
TJ, TSTG
- 65 to + 150
°C
Page 1 of 2
Rev. 02 : March 25, 2005
IF(AV)
Maximum Average Forward Current, Tc = 100°C
35
RATING
SYMBOL
50
IFSM
150
Trr
UNIT
A
ns
A
0.110(2.8)
0.098(2.5)
0.055(1.4)Max.
0.543(13.8)
0.512(13.2)
ITO-220AB
Dimensions in inches and ( millimeters )
0.100(2.55)
0.124(3.16)Max.
0.272(6.9)
0.248(6.3)
0.161(4.1)Max.
0.603(15.5)
0.573(14.8)
0.185(4.70)Max.
0.035(0.9)Max.
0.406(10.3)MAX.
0.134(3.4)DIA.
0.113(3.0)DIA.
0.112(2.85)
0.100(2.55)
0.030(0.76)Max.
2
3
1
PIN 1
PIN 3
PIN 2


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