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MURF1010CT Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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MURF1010CT Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page MURF1005CT Dual Ultrafast Plastic Rectifiers THRU MURF1040CT PRV : 50 - 200 Volts Io : 10 Ampere FEATURES : * Ideally suited for free wheeling diode power factor correction applications * Soft recovery characteristics * Excellent high temperature switching * Glass passivated chip junction * Pb / RoHS Free MECHANICAL DATA : * Case : Epoxy, Molded * Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds * Polarity: As marked * Mounting Position: Any * Weight : 2.24 grams (Approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Tc =25°C unless otherwise specified.) MURF 1005CT 1010CT 1015CT 1020CT 1030CT 1040CT Maximum Repetitive Peak Reverse Voltage VRRM 50 100 150 200 300 400 V Maximum RMS Voltage VRMS 35 70 105 140 210 280 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 V 5.0 10 (Total Device) Maximum Peak Forward Surge Current, 8.3ms Single half sine wave superimposed on rated load (JEDEC Method) Maximum Instantaneous Forward Voltage per Leg at IF = 5 A, Tj = 25°C VF 0.95 1.3 V Maximum DC Reverse Current IR 5.0 (Tc = 25°C) µA at Rated DC Blocking Voltage IR(H) 500 (Tc = 100°C) µA Maximum Reverse Recovery Time (IF = 0.5A, IR = 1.0A, Irr = 0.25A ) Operating storage and temperature range TJ, TSTG - 65 to + 150 °C Page 1 of 2 Rev. 02 : March 25, 2005 IF(AV) Maximum Average Forward Current, Tc = 100°C 35 RATING SYMBOL 50 IFSM 150 Trr UNIT A ns A 0.110(2.8) 0.098(2.5) 0.055(1.4)Max. 0.543(13.8) 0.512(13.2) ITO-220AB Dimensions in inches and ( millimeters ) 0.100(2.55) 0.124(3.16)Max. 0.272(6.9) 0.248(6.3) 0.161(4.1)Max. 0.603(15.5) 0.573(14.8) 0.185(4.70)Max. 0.035(0.9)Max. 0.406(10.3)MAX. 0.134(3.4)DIA. 0.113(3.0)DIA. 0.112(2.85) 0.100(2.55) 0.030(0.76)Max. 2 3 1 PIN 1 PIN 3 PIN 2 |
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