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TVR1J Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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TVR1J Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page TVR1B/G/J FAST RECOVERY RECTIFIER DIODES PRV : 100 - 600 Volts Io : 0.5 Ampere FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency MECHANICAL DATA : * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL TVR1B TVR1G TVR1J UNIT Maximum Recurrent Peak Reverse Voltage VRRM 100 400 600 V Maximum Average Forward Current IF(AV) 0.5 A Maximum Peak One Cycle Surge Forward Current ( Non-repetitive ) Maximum Peak Forward Voltage at IF = 0.5 A VF 1.2 V Maximum Repetitive Reverse Current at VRRM IRRM 10 µA Trr(1) 300 (Typ.) ns Trr(2) 75 ns Junction Temperature Range TJ - 40 to + 125 °C Storage Temperature Range TSTG - 40 to + 125 °C Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 100 mA, IR = 100 mA. ( 2 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. Page 1 of 2 Rev. 02 : March 25, 2005 RATING IFSM 10 (50 Hz) A Maximum Reverse Recovery Time Dimensions in inches and ( millimeters ) DO - 41 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2) 0.166 (4.2) 1.00 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) * Pb / RoHS Free |
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