HX6408

Advanced Information

7

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ASYCHRONOUS READ CYCLE AC TIMING CHARACTERISTICS (1)

Worst Case (3)

-55 to 125°C

Symbol

Parameter

Typical

(2)

Min

Max

Units

TAVAVR

Address Read Cycle Time

300KRad

1MRad

20

25

ns

TAVQV

Address Access Time

300KRad

1MRad

20

25

ns

TAXQX

Address Change to Output Invalid Time

3

ns

TSLQV

Chip Select Access Time

300KRad

1MRad

20

25

ns

TSLQX

Chip Select Output Enable Time

4

ns

TSHQZ

Chip Select Output Disable Time

8

ns

TPHQV

Sleep Enable Access Time

25

ns

TPHQX

Sleep Enable Output Enable Time

5

ns

TPLQZ

Sleep Enable Output Disable Time

10

ns

TGLQV

Output Enable Access Time

5

ns

TGLQX

Output Enable Output Enable Time

0

ns

TGHQZ

Output Enable Output Disable Time

5

ns

(1) Test conditions: input switching levels, VIL/VIH=0V/3V, input rise and fall times <1 ns/V, input and output timing reference levels shown in

(2) Typical operating conditions: VDD=3.3V, TA=25°C, pre-radiation.

(3) Worst case operating conditions: VDD=3.0V to 3.6V, TA=-55°C to 125°C, post total dose 25°C at

ADDRESS

NCS

DATA OUT

NSL

NOE

DATA VALID

HIGH

IMPEDANCE