HX6408

Advanced Information

4

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RADIATION HARDNESS RATINGS (1)

Parameter

Limits (2)

Units

Test Conditions

Total Dose

≥3X10

5

≥1X10

6

Transient Dose Rate Upset

≥1X10

10

rad(Si)/s

Pulse width ≤50 ns

Transient Dose Rate Survivability

≥1X10

12

rad(Si)/s

Pulse width ≤50 ns, X-

ray,VDD=3.6V,

Soft Error Rate

<1X10

-10

Upsets/bit-day

worst case environment

Neutron Fluence

≥1X10

14

N/cm

2

1MeV equivalent

energy, Unbiased,

(1) Device will not latch up due to any of the specified radiation exposure conditions.

(2) Operating conditions (unless otherwise specified): VDD=3.0V to 3.6V, TA=-55

ABSOLUTE MAXIMUM RATINGS (1)

Rating

Symbol

Parameter

Min

Max

Units

VDD

Supply Voltage Range (2)

-0.5

4.6

V

VPIN

Voltage on Any Pin (2)

-0.5

VDD+0.5

V

TSTORE

Storage Temperature (Zero Bias)

-65

150

°C

TSOLDER

Soldering Temperature (5 seconds)

270

°C

PD

Maximum Power Dissipation (3)

2.5

W

IOUT

DC or Average Output Current

25

mA

VPROT

EST Input Protection Voltage (4)

2000

V

36 Pin FP

2

ΘJC

Thermal Resistance (Jct-to-Case)

°C/W

TJ

Junction Temperature

175

°C

(1) Stresses in excess of those listed above may result in permanent damage. These are stress ratings only, and operation at these levels is

not implied. Frequent or extended exposure to absolute maximum conditions may affect device reliability.

(2) Voltage referenced to VSS.

(3) RAM power dissipation (IDDSB + IDDOP) plus RAM output driver power dissipation due to external loading must not exceed this

specification.

(4) Class 2 electrostatic discharge (ESD) input protection. Tested per MIL-STD-883, Method 3015 by DSEC certified lab.

RECOMMENDED OPERATING CONDITIONS

Description

Symbol

Parameter

Min

Typ

Max

Units

VDD

Supply Voltage (referenced to VSS)

3.0

3.3

3.6

V

TA

Ambient Temperature

-55

25

125

°C

VPIN

Voltage on Any Pin (referenced to VSS)

-0.3

VDD+0.3

V

VDDRAMP

VDD Turn on ramp time

50

ms