HX6408KQRM datasheet(1/11 Pages) HONEYWELL

Part #	HX6408KQRM

Description	512k x 8 STATIC RAM

Download	11 Pages

Scroll/Zoom	100%

Manufacturer	HONEYWELL [Honeywell Solid State Electronics Center]

Direct Link	http://honeywell.com/Pages/Home.aspx

Logo

1 / 11 page

HX6408

Advanced Information

1

www.honeywell.com

HX6408

512k x 8 STATIC RAM

The 512K x 8 Radiation Hardened Static RAM is a high

performance 524,288 word x 8-bit static random access

memory with optional industry-standard functionality. It is

fabricated with Honeywell’s radiation hardened Silicon On

Insulator (SOI) technology, and is designed for use in low

voltage systems operating in radiation environments. The

RAM operates over the full military temperature range and

requires only a single 3.3 V ± 0.3V power supply. Power

consumption is typically <30 mW @ 1MHz in write mode,

<14 mW @ 1MHz in read mode, and is less than 5 mW

when in standby mode.

Honeywell’s enhanced RICMOS™(Radiation Insensitive

CMOS) SOI V technology is radiation hardened through the

use of advanced and proprietary design, layout and process

hardening techniques.

The RICMOS™ V low power process is a SOI CMOS

technology with an 80 Å gate oxide and a minimum

drawn feature size of 0.35

µm. Additional features

include tungsten via and contact plugs, Honeywell’s

proprietary SHARP planarization process and a lightly

doped drain (LDD) structure for improved short

channel reliability. A seven transistor (7T) memory cell

is used for superior single event upset hardening,

while three layer metal power busing and the low

collection volume SOI substrate provide improved

dose rate hardening.

FEATURES

Fabricated with RICMOS™ V

Silicon On Insulator (SOI)

0.35 mm Process (Leff = 0.28 µm)

Total Dose ≥ 3x10

5 and 1X106 rad(SiO

2)

Neutron ≥1x10

14 cm-2

Dynamic and Static Transient Upset

≥1x10

10 rad(Si)/s (3.3 V)

Dose Rate Survivability ≥1x10

12 rad(Si)/s

Soft Error Rate

≤1x10

-10 Upsets/bit-day (3.3 V)

No Latchup

Read/Write Cycle Times

≤20 ns, (3.3 V), -55 to 125°C

Typical Operating Power (3.3 V)

<14 mW @ 1MHz Read

<30 mW @ 1MHz Write

<5 mW Standby mode

Asynchronous Operation

CMOS Compatible I/O

Single Power Supply,

3.3 V ± 0.3 V

Operating Range is

-55°C to +125°C

36-Lead Flat Pack Package

Optional Low Power Sleep

Mode

Similar Part No. - HX6408KQRM

Manufacturer	Part #	Datasheet	Description
Lattice Semiconductor	HX640	861Kb / 12P	iCE40??HX-Series Ultra Low-Power mobileFPGA??Family

More results

Similar Description - HX6408KQRM

Manufacturer	Part #	Datasheet	Description
Cypress Semiconductor	CY7C1049	128Kb / 10P	512K x 8 Static RAM
	CY7C1049BV33	165Kb / 10P	512K x 8 Static RAM
	CY7C1049B	132Kb / 10P	512K x 8 Static RAM
Weida Semiconductor, In...	WCFS4008V1C	201Kb / 9P	512K x 8 Static RAM
Cypress Semiconductor	CY7C1049BN	443Kb / 10P	512K x 8 Static RAM
	CY7C1049BNV33	421Kb / 8P	512K x 8 Static RAM
	CY62148B	189Kb / 11P	512K x 8 Static RAM
	CY7C1049CV33	195Kb / 9P	512K x 8 Static RAM
List of Unclassifed Man...	WCMA4008C1X	176Kb / 10P	512K x 8 Static RAM
Cypress Semiconductor	CY7C1049BN	455Kb / 10P	512K x 8 Static RAM

More results

HX6408KQRM Datasheet(PDF) 1 Page - Honeywell Solid State Electronics Center

HX6408KQRM Datasheet(HTML) 1 Page - Honeywell Solid State Electronics Center

Similar Part No. - HX6408KQRM

Similar Description - HX6408KQRM

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Datasheet Download

Link URL