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HX6408KSFM Datasheet(PDF) 10 Page - Honeywell Solid State Electronics Center |
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HX6408KSFM Datasheet(HTML) 10 Page - Honeywell Solid State Electronics Center |
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10 / 11 page  HX6408 Advanced Information 10 www.honeywell.com /TPLDX time, respectively. The minimum write cycle time is TAVAV. QUALITY AND RADIATION HARDNESS ASSURANCE Honeywell maintains a high level of product integrity through process control, utilizing statistical process control, a complete “Total Quality Assurance System,” a computer data base process performance tracking system and a radiation-hardness assurance strategy. The radiation hardness assurance strategy starts with a technology that is resistant to the effects of radiation. Radiation hardness is assured on every wafer by irradiating test structures as well as SRAM product, and then monitoring key parameters, which are sensitive to ionizing radiation. Conventional MIL- STD-883 TM 5005 Group E testing, which includes total dose exposure with Cobalt 60, may also be performed as required. This Total Quality approach ensures our customers of a reliable product. It starts with process development and continuing through product qualification and screening. SCREENING LEVELS Honeywell offers several levels of device screening to meet your system needs. “Engineering Devices” are available with limited performance and screening for operational evaluation testing. Hi-Rel Level B and S devices undergo additional screening per the requirements of MILSTD-883. As a QML supplier, Honeywell also offers QML Class Q and V devices per MIL-PRF-38535 and are available per the applicable Standard Microcircuit Drawing (SMD). QML devices offer ease of procurement by eliminating the need to create detailed specifications and offer benefits of improved quality and cost savings through standardization. RELIABILITY Honeywell understands the stringent reliability requirements for space and defense systems and has extensive experience in reliability testing on programs of this nature. This experience is derived from comprehensive testing of VLSI processes. Reliability attributes of the RICMOS™ SOI process were characterized by testing specially designed irradiated and non-irradiated test structures from which specific failure mechanisms were evaluated. These specific mechanisms included, but were not limited to, hot carriers, electromigration and time dependent dielectric breakdown. This data was then used to make changes to the design models and process to ensure more reliable products. In addition, the reliability of the RICMOS™ SOI process and product in a military environment is monitored by testing irradiated and non-irradiated circuits in accelerated dynamic life test conditions. Packages were qualified for product use after undergoing Groups B & D testing as outlined in MIL-STD-883, TM 5005, Class S. Quality conformance testing is performed as an option on all production lots to ensure the ongoing reliability of the product. PACKAGING The 512K x 8 SRAM is offered in a commercially compatible 36-lead flat pack. This package is constructed of multi-layer ceramic (Al2O3) and contains internal power and ground planes. Parentheses denote pin options. These pins are available as NC to conform to commercial standards. All NC (no connect) pins should be connected to VSS to prevent charge build up in the radiation environment. |
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