2SA2092

Transistors

1/3

Parameter

V

V

V

A

mW

∗1 Pw=10ms

∗2 Each terminal mounted on a recommended land

∗2

∗1

°C

A

°C

Tj

Tstg

Symbol

−60

−60

−6

−1

−2

500

150

−55 to +150

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

DC

PULSE

Power dissipation

Junction temperature

Range of storage temperature

-1A / -60V Bipolar transistor

2SA2092

Applications

High-speed switching, low frequency amplification

Feature

2) Low saturation voltage.

3) Strong discharge resistance for inductive load and

capacitance load.

4) Low switching noise.

Structure

PNP epitaxial planar silicon transistor

External dimensions (Unit : mm)

Each lead has same dimensions

Abbreviated symbol : VN

TSMT3

(1) Base

(2) Emitter

(3) Collector

0~0.1

0.16

0.85

1.0MAX

0.7

(2)

(1)

(3)

2.9

1.9

0.95

0.95

0.4

Absolute maximum ratings (Ta=25

°C)

Packaging specifications

Taping

2SA2092

Part No.

TL

3000

Packaging type

TSMT3

Package

Basic ordering unit (pieces)

Code

Q

120-270

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Cob

ton

Min.

−6

−

−

−

120

−

−

−

−

−

300

−−

15

30

−

−1.0

−1.0

−

−200

−500

270

−

−

−

=

−100µA

=

=

−40V

=

−4V

=

=

−1A,

=

−100mA

=100mA

−25V

=

=

V

µA

µA

MHz

mV

pF

ns

tstg

−

100

−

ns

tf

−

30

−

ns

Typ.

Max.

Unit

Conditions

−60

−−

V

=

−100µA

Collector-emitter breakdown voltage

Collector cut-off current

DC current gain

Transition frequency

Collector output capacitance

Turn-on time

Storage time

Fall time

Emitter cut-off current

Collector-emitter saturation voltage

−60

−−

=

−1mA

V

Collector-base breakdown voltage

Emitter-base breakdown voltage

∗2

∗3

∗1

∗1 Pulse measurement

∗2 See switching test circuit

∼

−