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2SA2092 Datasheet(PDF) 1 Page - Rohm |
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2SA2092 Datasheet(HTML) 1 Page - Rohm |
1 / 4 page 2SA2092 Transistors 1/3 Parameter V V V A mW ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land ∗2 ∗1 °C A °C VCBO VCEO IC PC Tj VEBO ICP Tstg Symbol −60 −60 −6 −1 −2 500 150 −55 to +150 Limits Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC PULSE Power dissipation Junction temperature Range of storage temperature -1A / -60V Bipolar transistor 2SA2092 Applications High-speed switching, low frequency amplification Feature 1) High speed switching. (tf : Typ. : 30ns at IC = -1A) 2) Low saturation voltage. (Typ. : −200mV at IC = −500mA, IB = −50mA) 3) Strong discharge resistance for inductive load and capacitance load. 4) Low switching noise. Structure PNP epitaxial planar silicon transistor External dimensions (Unit : mm) Each lead has same dimensions Abbreviated symbol : VN TSMT3 (1) Base (2) Emitter (3) Collector 0~0.1 0.16 0.85 1.0MAX 0.7 (2) (1) (3) 2.9 1.9 0.95 0.95 0.4 Absolute maximum ratings (Ta=25 °C) Packaging specifications Taping 2SA2092 Part No. TL 3000 Packaging type TSMT3 Package Basic ordering unit (pieces) Code hFE rank Q 120-270 Electrical characteristics (Ta=25 °C) Parameter Symbol BVEBO ICBO IEBO VCE(sat) fT hFE Cob ton Min. −6 − − − 120 − − − − − 300 −− 15 30 − −1.0 −1.0 − −200 −500 270 − − − IE = −100µA VCE = −2V, IC= −100mA VCB = −40V VEB = −4V IC = −500mA, IB= −50mA IC = −1A, IB1 = −100mA IB2 =100mA VCC −25V VCE = −10V, IE=100mA, f=10MHz VCB = −10V, IE=0, f=1MHz V µA µA MHz mV pF ns tstg − 100 − ns tf − 30 − ns Typ. Max. Unit Conditions BVCEO −60 −− V IC = −100µA Collector-emitter breakdown voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time Emitter cut-off current Collector-emitter saturation voltage BVCBO −60 −− IC = −1mA V Collector-base breakdown voltage Emitter-base breakdown voltage ∗2 ∗3 ∗1 ∗1 Pulse measurement ∗2 See switching test circuit ∗3 hFE rank ∼ − |
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