IXGT16N170AH1 datasheet(1/2 Pages) IXYS

Part #	IXGT16N170AH1

Description	High Voltage IGBT

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Manufacturer	IXYS [IXYS Corporation]

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V

CES

= 1700

V

I

C25

=

16

A

V

CE(sat)

=

5.0

V

t

fi(typ)

=

40 ns

IXGH/IXGT 16N170A

IXGH/IXGT 16N170AH1

C (TAB)

G = Gate,

C = Collector,

E = Emitter,

TAB = Collector

G

C

E

TO-247 AD

(IXGH)

Features

International standard packages

JEDEC TO-268 and

JEDEC TO-247 AD

High current handling capability

MOS Gate turn-on

- drive simplicity

Rugged NPT structure

Molding epoxies meet UL 94 V-0

flammability classification

SONICTM fast recovery copack diode

Applications

Capacitor discharge & pulser circuits

AC motor speed control

DC servo and robot drives

DC choppers

Uninterruptible power supplies (UPS)

Switched-mode and resonant-mode

power supplies

Advantages

High power density

Suitable for surface mounting

Easy to mount with 1 screw,

(isolated mounting screw hole)

DS99235(10/04)

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

BV

CES

I

C

= 250

µA, V

GE = 0 V

1700

V

GE(th)

I

C

= 250

µA, V

CE = VGE

3.0

5.0

V

I

CES

V

CE = 0.8 • VCES

16N170A

50

µA

V

GE = 0 V, Note 1

16N170AH1

100

µA

T

J = 125°C

16N170A

750

µA

16N170AH1

1.5

mA

I

GES

V

CE = 0 V, VGE = ±20 V

±100

nA

V

CE(sat)

I

C

= I

C90, VGE = 15 V

4.0

5.0

V

T

J = 125°C

4.8

V

Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25

°C to 150°C

1700

V

CGR

T

J

= 25

°C to 150°C; R

GE = 1 MΩ

1700

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C = 25°C16

A

I

C90

T

C = 90°C8

A

I

CM

T

C = 25°C, 1 ms

40

A

SSOA

V

GE = 15 V, TVJ = 125°C, RG = 10Ω

I

CM = 40

A

(RBSOA)

Clamped inductive load

@ 0.8 V

CES

t

SC

T

J = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22Ω

10

µs

P

C

T

C = 25°C

190

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

M

d

Mounting torque (M3)

TO-247

1.13/10Nm/lb.in.

Maximum lead temperature for soldering

300

°C

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10s

250

°C

Weight

TO-247

6

g

TO-268

4

g

TO-268 (IXGT)

G

E

High Voltage

IGBT

C (TAB)

Advance Technical Data

H1

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IXGT16N170AH1 Datasheet(PDF) 1 Page - IXYS Corporation

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