IXGR 50N60B

IXGR 50N60BD1

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

I

25

35

S

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

C

ies

4100

pF

pF

C

oes

V

300

pF

C

res

50

pF

Q

g

110

nC

Q

ge

I

30

nC

Q

gc

35

nC

t

d(on)

50

ns

t

ri

50

ns

t

d(off)

110

270

ns

t

fi

85

150

ns

E

off

3.0

4.0

mJ

t

d(on)

50

ns

t

ri

60

ns

E

on

3mJ

t

d(off)

200

ns

t

fi

250

ns

E

off

4.2

mJ

R

thJC

0.5 K/W

R

thCK

0.15

K/W

Inductive load, T

°°°°C

I

V

Remarks: Switching times may

increase for V

higher T

Inductive load, T

°°°°C

I

V

Remarks: Switching times may

increase for V

higher T

ISOPLUS 247 OUTLINE

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.83

5.21

.190 .205

A

1

2.29

2.54

.090 .100

A

2

1.91

2.16

.075 .085

b

1.14

1.40

.045 .055

b

1

1.91

2.13

.075 .084

b

2

2.92

3.12

.115 .123

C

0.61

0.80

.024 .031

D

20.80

21.34

.819 .840

E

15.75

16.13

.620 .635

e

5.45 BSC

.215 BSC

L

19.81

20.32

.780 .800

L1

3.81

4.32

.150 .170

Q

5.59

6.20

.220 .244

R

4.32

4.83

.170 .190

1 Gate, 2 Drain (Collector)

3 Source (Emitter)

4 no connection

Reverse Diode (FRED)

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

V

F

I

F

=

I

T

1.6

V

Pulse test, t

≤ 300 ms, duty cycle ≤ 2 %

2.5

V

I

RM

I

F

=

I

3.2

A

V

ns

t

rr

I

F

= 1 A; -di/dt = 200 A/ms; V

35

ns

R

thJC

0.85 K/W

Note: I

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463