IXYS reserves the right to change limits, test conditions, and dimensions.

IXTK 120N25P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

50

70

S

C

iss

8000

pF

C

oss

V

1300

pF

C

rss

220

pF

t

d(on)

30

ns

t

r

V

33

ns

t

d(off)

R

130

ns

t

f

33

ns

Q

g(on)

185

nC

Q

gs

V

50

nC

Q

gd

80

nC

R

thJC

0.18

°C/W

R

thCS

0.15

°C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

120

A

I

SM

Repetitive

300

A

V

SD

I

1.5

V

Pulse test, t

≤300 µs, duty cycle d≤ 2 %

t

rr

I

200

ns

Q

RM

V

3.0

µC

TO-264 (IXTK) Outline

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.82

5.13

.190

.202

A1

2.54

2.89

.100

.114

A2

2.00

2.10

.079

.083

b

1.12

1.42

.044

.056

b1

2.39

2.69

.094

.106

b2

2.90

3.09

.114

.122

c

0.53

0.83

.021

.033

D

25.91

26.16

1.020

1.030

E

19.81

19.96

.780

.786

e

5.46 BSC

.215 BSC

J

0.00

0.25

.000

.010

K

0.00

0.25

.000

.010

L

20.32

20.83

.800

.820

L1

2.29

2.59

.090

.102

P

3.17

3.66

.125

.144

Q

6.07

6.27

.239

.247

Q1

8.38

8.69

.330

.342

R

3.81

4.32

.150

.170

R1

1.78

2.29

.070

.090

S

6.04

6.30

.238

.248

T

1.57

1.83

.062

.072

Dim.

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2