HMD16M72D9A-F13 datasheet(6/9 Pages) HANBIT

Part #	HMD16M72D9A-F13

Description	Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V

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Manufacturer	HANBIT [Hanbit Electronics Co.,Ltd]

Direct Link	http://www.hbe.co.kr

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HANBit

HSD16M72D9A

URL:www.hbe.co.kr

- 6 -

HANBit Electronics Co.,Ltd.

REV.1.0 (August.2002)

Operating current

(Burst mode)

ICC4

IO = 0 mA

Page burst

4Banks Activated

tCCD = 2CLKs

150

145

125

mA

1

Refresh current

ICC5

tRC ≥ tRC(min)

220

210

mA

2

1.5

mA

Self refresh current

ICC6

CKE

≤ 0.2V

800

mA

Notes:

1. Measured with outputs open.

2. Refresh period is 64ms.

3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).

AC OPERATING TEST CONDITIONS

(vcc = 3.3V

± 0.3V, TA = 0 to 70° C)

PARAMETER

Value

UNIT

AC Input levels (Vih/Vil)

2.4/0.4

V

Input timing measurement reference level

1.4

V

Input rise and fall time

tr/tf = 1/1

ns

Output timing measurement reference level

1.4

V

Output load condition

See Fig. 2

OPERATING AC PARAMETER

(AC operating conditions unless otherwise noted)

VERSION

PARAMETER

SYMBOL

-13

-12

-10

-10L

UNIT

NOTE

Row active to row active delay

tRRD(min)

15

16

20

ns

1

RAS to CAS delay

tRP(min)

20

ns

1

Row precharge time

tRP(min)

20

ns

1

tRAS(min)

45

48

50

ns

1

Row active time

tRAS(max)

100

ns

Row cycle time

tRC(min)

65

68

70

ns

1

Last data in to row precharge

tRDL(min)

2

CLK

2

Last data in to Active delay

tDAL(min)

2 CLK + 20 ns

-

+3.3V

1200

Ω

870

Ω

50pF*

DOUT

Vtt=1.4V

50

Ω

50pF

DOUT

Z0=50

Ω

VOH (DC) = 2.4V, IOH = -2mA

VOL (DC) = 0.4V, IOL = 2mA

(Fig. 1) DC output load

circuit

(Fig. 2) AC output load circuit

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