HSD32M64F8K-10L datasheet(6/12 Pages) HANBIT

Part #	HSD32M64F8K-10L

Description	Synchronous DRAM Module 256Mbyte (32Mx64bit), SMM, based on16Mx8,4Banks, 4K Ref., 3.3V

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Manufacturer	HANBIT [Hanbit Electronics Co.,Ltd]

Direct Link	http://www.hbe.co.kr

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HANBit

HSD32M64F8K

URL:www.hbe.co.kr

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HANBit Electronics Co.,Ltd.

REV.1.0 (August.2002)

DC CHARACTERISTICS

(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)

VERSION

PARAMETER

SYMBOL

TEST

CONDITION

-1H

-1L

UNIT

NOT

E

Operating current

(One bank active)

ICC1

Burst length = 1

tRC ≥ tRC(min)

IO = 0mA

1,760

mA

1

ICC2P

CKE

≤ V

IL(max)

tCC=10ns

16

mA

3

Precharge standby current

in

power-down mode

ICC2PS

CKE & CLK

≤ V

IL(max)

tCC=∞

16

mA

3

ICC2N

CKE

≥ V

IH(min)

/CE

≥ V

IH(min),

tcc=10ns

Input signals are changed

one time during 20ns

320

Precharge standby current

in

non power-down mode

ICC2NS

CKE

≥ V

IH(min)

CLK

≤ V

IL(max),

tcc=

∞

Input signals are stable

112

mA

3

ICC3P

CKE

≤ V

IL(max), tcc=10ns

80

Active standby current in

power-down mode

ICC3PS

CKE&CLK

≤ V

IL(max)

tcc=

∞

80

mA

3

ICC3N

CKE

≥V

IH(min),

/CE

≥V

IH(min),

tcc=10ns

Input signals are changed

one time during 20ns

480

Active standby current in

non power-down mode

(One bank active)

ICC3NS

CKE

≥VIH(min)

CLK

≤VIL(max), tcc=∞

Input signals are stable

320

mA

3

Operating current

(Burst mode)

ICC4

IO = 0 mA

Page burst

4Banks Activated

tCCD = 2CLKs

2000

mA

1

Refresh current

ICC5

tRC ≥ tRC(min)

3360

mA

2

Self refresh current

ICC6

CKE

≤ 0.2V

24

mA

3

Notes:

1. Measured with outputs open.

2. Refresh period is 64ms.

3. Measured with 1PLL & 3 Drive Ics.

4. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).

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HSD32M64F8K-10L Datasheet(PDF) 6 Page - Hanbit Electronics Co.,Ltd

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