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MAX5078 Datasheet(PDF) 8 Page - Maxim Integrated Products |
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MAX5078 Datasheet(HTML) 8 Page - Maxim Integrated Products |
8 / 12 page Detailed Description VDD Undervoltage Lockout (UVLO) The MAX5078A/MAX5078B have internal undervoltage lockout (UVLO) for VDD. When VDD is below the UVLO threshold, OUT is pulled low independent of the state of the inputs. The undervoltage lockout is typically 3.5V with 200mV typical hysteresis to avoid chattering. When VDD rises above the UVLO threshold, the output goes high or low depending upon the logic-input levels. Bypass VDD using a low-ESR ceramic capacitor for proper operation (see the Applications Information section). Logic Inputs The MAX5078A has CMOS logic inputs while the MAX5078B has TTL-compatible logic inputs. The logic inputs are protected against the voltage spikes up to 18V, regardless of the VDD voltage. The TTL and CMOS logic inputs have 300mV and 0.1 x VDD hysteresis, respectively, to avoid double pulsing during transition. The low 2.5pF input capacitance reduces loading and increases switching speed. The logic inputs are high impedance and must not be left floating. If the inputs are left open, OUT can go to an undefined state as soon as VDD rises above the UVLO threshold. Therefore, the PWM output from the controller must assume proper state when powering up the device. The MAX5078A/MAX5078B have two logic inputs, provid- ing greater flexibility in controlling the MOSFET. Use IN+ for noninverting logic and IN- for inverting logic operation. Connect IN+ to VDD and IN- to GND, if not used. Alternatively, the unused input can be used as an ON/OFF function. Use IN+ for active-low shutdown logic and IN- for active-high shutdown logic (see Figure 3). See Table 1 for all possible input combinations. Driver Output The MAX5078A/MAX5078B have low RDS(ON) p-channel and n-channel devices (totem pole) in the output stage for the fast turn-on/turn-off, high-gate-charge switching MOSFETs. The peak source or sink current is typically 4A. The output voltage (VOUT) is approximately equal to VDD when in high state and is ground when in low state. The driver RDS(ON) is lower at higher VDD resulting in higher source-/sink-current capability and faster switch- ing speeds. The propagation delays from the noninvert- ing and inverting logic inputs to OUT are matched to 2ns typically. The break-before-make logic avoids any cross- conduction between the internal p- and n-channel devices, and eliminates shoot-through, thus reducing the quiescent supply current. Applications Information RLC Series Circuit The driver’s RDS(ON) (RON), internal bond/lead induc- tance (LP), trace inductance (LS), gate inductance (LG), and gate capacitance (CG) form a series RLC circuit with a second-order characteristic equation. The series RLC circuit has an undamped natural frequency ( ϖ0) and a damping ratio (ζ) where: The damping ratio needs to be greater than 0.5 (ideally 1) to avoid ringing. Add a small resistor (RGATE) in series with the gate when driving a very low gate- charge MOSFET, or when the driver is placed away from the MOSFET. ϖ ξ 0 1 2 = ++ × = × ++ () () LLL C R LLL C PSG G ON PSG G 4A, 20ns, MOSFET Driver 8 _______________________________________________________________________________________ Pin Description PIN NAME FUNCTION 1 IN- Inverting Logic-Input Terminal. Connect to GND when not used. 2, 3 GND Ground 4VDD Power Supply. Bypass to GND with one or more 0.1µF ceramic capacitors. 5 OUT Driver Output. Sources or sinks current to turn the external MOSFET on or off. 6 IN+ Noninverting Logic-Input Terminal. Connect to VDD when not used. —EP Exposed Pad. Internally connected to GND. Do not use the exposed pad as the only electrical ground connection. |
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