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GS8162Z72CC-V Datasheet(PDF) 1 Page - GSI Technology |
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GS8162Z72CC-V Datasheet(HTML) 1 Page - GSI Technology |
1 / 27 page GS8162Z72CC-xxxV 18Mb Pipelined and Flow Through Synchronous NBT SRAM 250 MHz–150 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O 209-Bump BGA Commercial Temp Industrial Temp Preliminary Rev: 1.02a 6/2006 1/27 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs • 1.8 V or 2.5 V core power supply • 1.8 V or 2.5 V I/O supply • User-configurable Pipeline and Flow Through mode • ZQ mode pin for user-selectable high/low output drive • IEEE 1149.1 JTAG-compatible Boundary Scan • On-chip write parity checking; even or odd selectable • On-chip parity encoding and error detection • LBO pin for Linear or Interleave Burst mode • Pin-compatible with 2M, 4M, and 8M devices • Byte write operation (9-bit Bytes) • 3 chip enable signals for easy depth expansion • ZZ Pin for automatic power-down • JEDEC-standard 209-Bump BGA package • RoHS-compliant 209-Bump BGA package available Functional Description The GS8162Z72CC-xxxV is an 18Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/ single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous inputs include the Sleep mode enable (ZZ) and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off- chip write pulse generation required by asynchronous SRAMs and simplifies input signal timing. The GS8162Z72CC-xxxV may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, in addition to the rising-edge- triggered registers that capture input signals, the device incorporates a rising edge triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge-triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock. The GS8162Z72CC-xxxV is implemented with GSI's high performance CMOS technology and is available in a JEDEC- standard 209-bump BGA package. Parameter Synopsis -250 -200 -150 Unit Pipeline 3-1-1-1 tKQ tCycle 3.0 4.0 3.0 5.0 3.8 6.7 ns ns Curr 425 345 270 mA Flow Through 2-1-1-1 tKQ tCycle 5.5 5.5 6.5 6.5 7.5 7.5 ns ns Curr 315 275 250 mA |
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