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STL50NH3LL Datasheet(PDF) 4 Page - STMicroelectronics |
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STL50NH3LL Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 12 page Electrical characteristics STL50NH3LL 4/12 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test condictions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS= 0 30 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125°C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±16V ± 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 1V RDS(on) Static drain-source on resistance VGS= 10V, ID= 6.5A VGS= 4.5V, ID= 6.5A 0.011 0.012 0.013 0.015 Ω Ω Table 5. Dynamic Symbol Parameter Test condictions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS =10V, ID = 6.5A 32 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 965 285 38 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=15V, ID = 13A VGS =4.5V (see Figure 7) 9 3.7 3 12 nC nC nC RG Gate input resistance f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain 0.5 1.5 2.5 Ω |
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