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HMC519 Datasheet(PDF) 1 Page - Hittite Microwave Corporation |
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HMC519 Datasheet(HTML) 1 Page - Hittite Microwave Corporation |
1 / 6 page 1 1 - 174 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC519 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 18 - 32 GHz v00.0904 General Description Features Functional Diagram The HMC519 chip is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) which covers the 18 to 32 GHz frequency range. The HMC519 provides 15 dB of small signal gain, 2.8 dB of noise figure and has an output IP3 greater than 23 dBm. The chip can easily be integrated into hy- brid or MCM assemblies due to its small size. All data is tested with the chip in a 50 Ohm test fixture con- nected via 0.075 mm (3 mil) ribbon bonds of minimal length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter bondwires may also be used to make the RFIN and RFOUT connections. Noise Figure: 2.8 dB Gain: 15 dB OIP3: 23 dBm Single Supply: +3V @ 65 mA 50 Ohm Matched Input/Output Electrical Specifications, T A = +25° C, Vdd 1, 2, 3 = +3V Typical Applications The HMC519 is ideal for use as either a LNA or driver amplifier for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • Test Equipment & Sensors • Military & Space Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 18 - 28 28 - 32 GHz Gain 12 15 11 14 dB Gain Variation Over Temperature 0.015 0.025 0.015 0.025 dB/ °C Noise Figure 2.8 3.5 3.5 4.5 dB Input Return Loss 13 9 dB Output Return Loss 12 12 dB Output Power for 1 dB Compression (P1dB) 9 12 10 14 dBm Saturated Output Power (Psat) 15 18 dBm Output Third Order Intercept (IP3) 23 26 dBm Supply Current (Idd)(Vdd = +3V) 65 65 mA |
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