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HMC559 Datasheet(PDF) 6 Page - Hittite Microwave Corporation |
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HMC559 Datasheet(HTML) 6 Page - Hittite Microwave Corporation |
6 / 8 page 1 1 - 185 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC559 GaAs PHEMT MMIC POWER AMPLIFIER, DC - 20.0 GHz v01.0406 Pad Number Function Description Interface Schematic 1IN This pad is DC coupled and matched to 50 Ohms from DC - 20GHz. Blocking capacitor is required. 2Vgg2 Gate control 2 for amplifier. Attach bypass capacitor per application circuit herein. For nominal operation +4V should be applied to Vgg2. 3ACG2 Low frequency termination. Attach bypass capacitor per application circuit herein. 4 OUT & Vdd RF output for amplifier. Connect DC bias (Vdd) network to provide drain current (Idd). See application circuit herein. 5Vgg1 Gate control 1 for amplifier. Attach bypass capacitor per application circuit herein. Please follow “MMIC Amplifier Biasing Procedure” application note. 6ACG1 Low frequency termination. Attach bypass capacitor per application circuit herein. Die Bottom GND Die bottom must be connected to RF/DC ground. Pad Descriptions |
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Similar Description - HMC559 |
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