74AHC1G07GW datasheet(2/16 Pages) PHILIPS

Part #	74AHC1G07GW

Description	Buffer with open-drain output

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Manufacturer	PHILIPS [NXP Semiconductors]

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2002 Oct 02

2

Philips Semiconductors

Product speciﬁcation

Buffer with open-drain output

74AHC1G07; 74AHCT1G07

FEATURES

• High noise immunity

• ESD protection:

– HBM EIA/JESD22-A114-A exceeds 2000 V

– MM EIA/JESD22-A115-A exceeds 200 V

– CDM EIA/JESD22-C101 exceeds 1000 V.

• Low power dissipation

• SOT353 and SOT753 packages

• Output capability standard (open-drain)

• Specified from −40 to +125 °C.

DESCRIPTION

The 74AHC1G/AHCT1G07 is a high-speed Si-gate CMOS

device.

The 74AHC1G/AHCT1G07 provides the non-inverting

buffer.

The output of the 74AHC1G/AHCT1G07 devices is

open-drain and can be connected to other open-drain

outputs to implement active-LOW wired-OR or

active-HIGH wired-AND functions. For digital operation

this device must have a pull-up resistor to establish a logic

HIGH-level.

QUICK REFERENCE DATA

GND = 0 V; Tamb =25 °C; tr =tf ≤ 3.0 ns.

Notes

1. CPD is used to determine the dynamic power dissipation (PD in µW).

PD =CPD × VCC2 × fi +(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in Volts.

2. The condition is VI = GND to VCC.

FUNCTION TABLE

See note 1.

Note

1. H = HIGH voltage level;

L = LOW voltage level;

Z = high-impedance OFF-state.

SYMBOL

PARAMETER

CONDITIONS

TYPICAL

UNIT

AHC1G

AHCT1G

tPZL

propagation delay A to Y

CL = 15 pF; VCC = 5 V

2.5

2.8

ns

tPLZ

propagation delay A to Y

CL = 15 pF; VCC = 5 V

4.2

3.9

ns

CI

input capacitance

1.5

pF

CPD

power dissipation capacitance

CL = 50 pF; f = 1 MHz; notes 1 and 2

5

6.5

pF

INPUT

OUTPUT

AY

LL

HZ

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74AHC1G07GW Datasheet(PDF) 2 Page - NXP Semiconductors

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