J174 datasheet(2/6 Pages) VISHAY

Part #	J174

Description	P-Channel JFETs

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Manufacturer	VISHAY [Vishay Siliconix]

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J/SST174/175/176/177 Series

Vishay Siliconix

www.vishay.com

9-2

Document Number: 70257

S-04030—Rev. E, 04-Jun-01

ABSOLUTE MAXIMUM RATINGS

Gate-Drain Voltage

30 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate-Source Voltage

30 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate Current

–50 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature

–55 to 150

_C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature

–55 to 150

_C

. . . . . . . . . . . . . . . . . . . . . . . . . .

Lead Temperature (1/16” from case for 10 sec.)

300

_C

. . . . . . . . . . . . . . . . . . .

Power Dissipationa

350 mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Notes

a.

Derate 2.8 mW/

_C above 25_C

SPECIFICATIONS FOR J/SST174 AND J/SST175 (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

J/SST174

J/SST175

Parameter

Symbol

Test Conditions

Typa

Min

Max

Min

Max

Unit

Static

Gate-Source Breakdown Voltage

V(BR)GSS

IG = 1 mA , VDS = 0 V

45

30

Gate-Source Cutoff Voltage

VGS(off)

VDS = –15 V, ID = –10 nA

5

10

3

6

V

Saturation Drain Currentb

IDSS

VDS = –15 V, VGS = 0 V

–20

–135

–7

–70

mA

VGS = 20 V, VDS = 0 V

0.01

1

Gate Reverse Current

IGSS

TA = 125_C

5

Gate Operating Current

IG

VDG = –15 V, ID = –1 mA

0.01

nA

VDS = –15 V, VGS = 10 V

–0.01

–1

Drain Cutoff Current

ID(off)

TA = 125_C

–5

Drain-Source On-Resistance

rDS(on)

VGS = 0 V, VDS = –0.1 V

85

125

W

Gate-Source Forward Voltage

VGS(F)

IG = –1 mA , VDS = 0 V

–0.7

V

Dynamic

Common-Source

Forward Transconductance

gfs

VDS = –15 V, ID = –1 mA

4.5

mS

Common-Source

Output Conductance

gos

VDS = –15 V, ID = –1 mA

f = 1 kHz

20

mS

Drain-Source On-Resistance

rds(on)

VGS = 0 V, ID = 0 mA , f = 1 kHz

85

125

W

Common-Source Input Capacitance

Ciss

VDS = 0 V, VGS = 0 V, f = 1 MHz

20

Common-Source

Reverse Transfer Capacitance

Crss

VDS = 0 V, VGS = 10 V

f = 1 MHz

5

pF

Equivalent Input Noise Voltage

en

VDG = –10 V, ID = –1 mA

f = 1 kHz

20

nV

⁄

√Hz

Switching

td(on)

10

Turn-On Time

tr

VGS(L) = 0 V, VGS(H) = 10 V

15

td(off)

GS(L)

GS(H)

See Switching Circuit

10

ns

Turn-Off Time

tf

20

Notes

a.

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

PSCIA

b.

Pulse test: PW

v300 ms duty cycle v3%.

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