3

°C, unless specified otherwise)

Notes:

1. Statistics distribution determined from a sample size of 500 parts taken from 3 different wafers.

2. Future wafers allocated to this product may have typical values anywhere between the minimum and maximum specification limits.

GAIN (dB)

Figure 1. Gain distribution @ 35 mA.

LSL = 1 5.5, Nominal = 17, USL = 18.5

15

19

16

17

18

300

250

200

150

100

50

0

LSL = 3.2, Nominal = 3.5, USL = 3.9

34

3.2

3.4

3.6

3.8

300

250

200

150

100

50

0

FREQUENCY (GHz)

Figure 3. Gain vs. Frequency at Id = 35 mA.

06

2

1

3

5

4

20

15

10

5

0

FREQUENCY (GHz)

Figure 4. P1dB vs. Frequency at Id=35 mA.

FREQUENCY (GHz)

Figure 5. OIP3 vs. Frequency at Id= 35 mA.

FREQUENCY (GHz)

Figure 6. NF vs. Frequency at Id=35 mA.

Vd (V)

Figure 7. Id vs. Vd and Temperature.

Id (mA)

Figure 8. Gain vs. Id and Temperature at 900 MHz.

06

2

1

3

5

4

20

15

10

5

0

06

2

1

3

5

4

30

25

20

15

10

5

06

2

1

3

5

4

6

5

4

3

2

05

2

1

3

4

70

60

50

40

30

20

10

0

-40

°C

25

°C

85

°C

070

20

10

30

40

50

60

18

17

16

15

14

13

12

-40

°C

25

°C

85

°C