Low Noise GaAs MMIC Amplifier

1.2 - 1.75 GHz

MAAM12000-A1

M/A-COM Inc. and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, nor does M/A-COM assume any liability

whatsoever arising out of the use or application of any product(s) or

information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

V4

1

RoHS

Compliant

Features

• Low Noise Figure: 1.35 dB

• High Gain: 26 dB

• No External Components Required

• DC Decoupled RF Input and Output

• Lead-Free 8-Lead Ceramic Package

• RoHS* Compliant and 260°C Reflow Compatible

Description

M/A-COM’s MAAM12000-A1 is a wide band, low

noise, MMIC amplifier housed in a lead-free, small

8-lead ceramic package. It includes two integrated

gain stages and employs series inductive feedback

to obtain excellent noise figure and a good, 50-ohm,

input and output impedance match over the 1.2 to

1.75 GHz band.

The MAAM12000-A1 is fully

monolithic, requires no external components and is

provided in a low-cost, user-friendly, microwave

package.

The MAAM12000-A1 is ideally suited to receivers in

GPS and DGPS applications and operates over both

the L1 and L2 frequency bands. Because of its wide

bandwidth, the MAAM12000-A1 can also be used as

a driver, buffer or IF amplifier in numerous

commercial and government system applications

that require high gain, excellent linearity and low

power consumption.

The MAAM12000-A1 is manufactured in-house

using a reliable, 0.5 micron, GaAs MESFET process.

This product is 100% RF tested to ensure

compliance to performance specifications.

Ordering Information

Part Number

Package

MAAM12000-A1

8-Lead Ceramic

MAAM12000-A1G

Gull Wing

Pin No.

Function

Pin No.

Function

1

Ground

5

2

RF Input

6

Ground

3

Ground

7

RF Output

4

8

Ground

Schematic

RF IN

GND

GND

V

GG

GND

GND

V

DD

RF OUT

Typical Biasing Configuration

and Functional Block Diagram

Parameter

Absolute Maximum

+7 V

-10 V

Input Power

+20 dBm

Current

150 mA

Channel Temperature

+150°C

-55°C to +100°C

Storage Temperature

-65°C to +150°C

2. Exceeding any one or combination of these limits may cause

permanent damage to this device.

3. M/A-COM does not recommend sustained operation near

these survivability limits.

4. Typical thermal resistance (

θjc) = +110°C/W.

1. The package bottom must be connected to RF and DC

ground.

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.